| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N6121 |
Diode TVS Single Bi-Dir 32.7V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
| 2 |
1N6121A |
Diode TVS Single Bi-Dir 32.7V 500W 2-Pin |
New Jersey Semiconductor |
| 3 |
1N6157 |
Diode TVS Single Bi-Dir 32.7V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 4 |
1N6157A |
Diode TVS Single Bi-Dir 32.7V 1.5KW 2-Pin |
New Jersey Semiconductor |
| 5 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 6 |
20KW132 |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 7 |
20KW132A |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 8 |
20KW232 |
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 9 |
20KW232A |
232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 10 |
274.031 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/32. Nominal resistance cold 16.0 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 11 |
30KW132 |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 12 |
30KW132A |
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
| 13 |
74HC32.REV1 |
74HC32 Data Sheet |
ON Semiconductor |
| 14 |
885014 |
2332.5 MHz RF BAW Filter - Satellite Radio / Automotive |
Qorvo |
| 15 |
885216 |
2332.5 MHz RF BAW Filter - SDARS / WCS Coexistence |
Qorvo |
| 16 |
BZX55C130 |
Diode Zener Single 132.5V 6% 500mW 2-Pin DO-35 |
New Jersey Semiconductor |
| 17 |
BZX85C130 |
Diode Zener Single 132.5V 5% 1.3W Automotive 2-Pin DO-41 |
New Jersey Semiconductor |
| 18 |
CMM0336-AK |
824 to 928 MHz, 6 V, 32.5 dBm multi-mode power amplifier |
CELERITEK |
| 19 |
CMM0336-AK-000T |
824 to 928 MHz, 6 V, 32.5 dBm multi-mode power amplifier |
CELERITEK |
| 20 |
D2525P35 |
Wavelength-selected isolated DFB laser module with PMF. ITU frequency 193.5. Wavelength 1549.32. Tolerance +-0.4nm. |
Agere Systems |
| 21 |
DG12232-09 |
GRAPHIC LCD MODULE display format: 122x32; module size: 64.8x32.0x4.5; viewing size: 54.8x19.0; dot size: 0.36x0.41; controller: SED1520DAA; |
Data International CO.LTD. |
| 22 |
DG24064 |
GRAPHIC LCD MODULE display format: 240x64 ; module size: 180.0x65.0x10.0; viewing size: 132.0x39.0; dot size: 0.49x0.49; controller: LC7981; |
Data International CO.LTD. |
| 23 |
DG24064-02 |
GRAPHIC LCD MODULE display format: 240x64 ; module size: 180.0x65.0x10.0; viewing size: 132.0x39.0; dot size: 0.49x0.49; controller: T6963C; |
Data International CO.LTD. |
| 24 |
DS1099U-F |
32.750 kHz, Low-frequency dual econ oscillator |
MAXIM - Dallas Semiconductor |
| 25 |
DS32KHZ |
32.768 kHz Temperature-Compensated Crystal Oscillator |
MAXIM - Dallas Semiconductor |
| 26 |
DS32KHZ-C11/T&R/ |
32.768kHz Temperature-Compensated Crystal Oscillator |
MAXIM - Dallas Semiconductor |
| 27 |
DS32KHZ-N |
32.768kHz Temperature-Compensated Crystal Oscillator |
MAXIM - Dallas Semiconductor |
| 28 |
DS32KHZ-N/DIP |
32.768kHz Temperature-Compensated Crystal Oscillator |
MAXIM - Dallas Semiconductor |
| 29 |
DS32KHZ-N/WBGA |
32.768kHz Temperature-Compensated Crystal Oscillator |
MAXIM - Dallas Semiconductor |
| 30 |
DS32KHZ/DIP |
32.768kHz Temperature-Compensated Crystal Oscillator |
MAXIM - Dallas Semiconductor |
| | | |
