| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3235 |
Rectifier Diode 0.5A |
Motorola |
| 2 |
2N3235 |
NPN silicon power transistor |
Motorola |
| 3 |
2N3235 |
Silicon NPN Transistor |
Motorola |
| 4 |
2N3235 |
Trans GP BJT PNP 60V 0.2A 3-Pin TO-39 |
New Jersey Semiconductor |
| 5 |
2SC3235 |
Silicon NPN Power Transistors TO-220 package |
Savantic |
| 6 |
2SC3235 |
Silicon NPN triple diffused switching high voltage transistor |
TOSHIBA |
| 7 |
3235 |
DUAL-OUTPUT HALL-EFFECT SWITCH |
Allegro MicroSystems |
| 8 |
5962R-0323501QUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 9 |
5962R-0323501QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 10 |
5962R-0323501QUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 11 |
5962R-0323501VUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 12 |
5962R-0323501VUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 13 |
5962R-0323501VUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 14 |
5962R-0323502QUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 15 |
5962R-0323502QUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 16 |
5962R-0323502QUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 17 |
5962R-0323502VUA |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 18 |
5962R-0323502VUC |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 19 |
5962R-0323502VUX |
512K x 18 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 20 |
79RC32355 |
Communications Processor |
IDT |
| 21 |
79RC32355 |
IDT Interprise Integrated Communications Processor |
IDT |
| 22 |
AN681 |
L3235 WITH EXTERNAL RINGING |
SGS Thomson Microelectronics |
| 23 |
CPH3235 |
Low-Saturation Voltage Transistors |
SANYO |
| 24 |
CXA3235 |
All Band TV Tuner IC with On-chip PLL |
SONY |
| 25 |
CXA3235N |
All Band TV Tuner IC with On-chip PLL |
SONY |
| 26 |
EN3235 |
Bipolar Transistor, 20V, 5A, Low VCE(sat), NPN Single NMP |
ON Semiconductor |
| 27 |
FST3235 |
Schottky Rectifier |
Microsemi |
| 28 |
IDT79RC32351 |
Integrated Communications Processor |
IDT |
| 29 |
IDT79RC32355 |
Integrated Communications Processor |
IDT |
| 30 |
K4D553235F-GC |
256M GDDR SDRAM |
Samsung Electronic |
| | | |
