| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2327-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 2 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 3 |
2327-3 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 4 |
2327-5 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 5 |
2SJ327-Z |
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 6 |
2SJ327-Z-E1 |
P-channel enhancement type |
NEC |
| 7 |
2SJ327-Z-E2 |
P-channel enhancement type |
NEC |
| 8 |
2SJ327-Z-T1 |
P-channel enhancement type |
NEC |
| 9 |
2SJ327-Z-T2 |
P-channel enhancement type |
NEC |
| 10 |
31M327-7 |
STANDARD LOW FREQUENCY SMD CRYSTALS |
Unknow |
| 11 |
31M327-9 |
STANDARD LOW FREQUENCY SMD CRYSTALS |
Unknow |
| 12 |
82327-10 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 13 |
82327-15 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 14 |
82327-4 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 15 |
82327-6 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 16 |
AD8327-EVAL |
5 V CATV Line Driver Coarse Step Output Power Control |
Analog Devices |
| 17 |
ADMCF327-EVALKIT |
28-Lead Flash Memory DSP Switched Reluctance Motor Controller |
Analog Devices |
| 18 |
AM2327-001 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 19 |
AM2327-003 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 20 |
AM2327-005 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 21 |
AM82327-004 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 22 |
AM82327-006 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 23 |
AM82327-010 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 24 |
AM82327-015 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 25 |
BC327-016 |
Transistor Silicon Plastic PNP |
ON Semiconductor |
| 26 |
BC327-025 |
Transistor Silicon Plastic PNP |
ON Semiconductor |
| 27 |
BC327-040 |
Transistor Silicon Plastic PNP |
ON Semiconductor |
| 28 |
BC327-10 |
Silicon PNP Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
| 29 |
BC327-10 |
0.625W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 63 - 160 hFE |
Continental Device India Limited |
| 30 |
BC327-10 |
PNP Medium Power Transistor |
National Semiconductor |
| | | |
