| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2327-1 |
Is an internally-matched device (transistor) decifically designed for 2GHz telecommunications and telemetry applications |
SGS Thomson Microelectronics |
| 2 |
2327-15 |
2.3-2.7GHz 15W 24V NPN silicon transistor designed for microwave telecommunication applications |
SGS Thomson Microelectronics |
| 3 |
82327-10 |
Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 4 |
82327-15 |
Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz |
SGS Thomson Microelectronics |
| 5 |
BC327-10 |
Silicon PNP Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
| 6 |
BC327-10 |
0.625W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 63 - 160 hFE |
Continental Device India Limited |
| 7 |
BC327-10 |
PNP Medium Power Transistor |
National Semiconductor |
| 8 |
BC327-16 |
Silicon PNP Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
| 9 |
BC327-16 |
0.625W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 100 - 250 hFE |
Continental Device India Limited |
| 10 |
BC327-16 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 11 |
BC327-16 |
Small Signal Transistor (PNP) |
General Semiconductor |
| 12 |
BC327-16 |
PNP Low-Power General Purpose Transistor - plastic case |
IPRS Baneasa |
| 13 |
BC327-16 |
Silicon PNP Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 14 |
BC327-16 |
Low frequency transistor |
mble |
| 15 |
BC327-16 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 16 |
BC327-16 |
Amplifier Transistors(PNP) |
Motorola |
| 17 |
BC327-16 |
PNP Medium Power Transistor |
National Semiconductor |
| 18 |
BC327-16 |
Transistor Silicon PlasticPNP |
ON Semiconductor |
| 19 |
BC327-16 |
PNP general purpose transistor |
Philips |
| 20 |
BC327-16 |
PNP Silicon Transistor for AF driver stages as well as for universal applications |
Siemens |
| 21 |
BC327-16 |
PNP Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 22 |
BC327-16 |
Transistors, RF & AF |
Vishay |
| 23 |
BC327-16RL1 |
Amplifier Transistor PNP |
ON Semiconductor |
| 24 |
BC327-16ZL1 |
Transistor Silicon PlasticPNP |
ON Semiconductor |
| 25 |
CC327-16 |
0.625W General Purpose PNP Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 40 - hFE |
Continental Device India Limited |
| 26 |
JC327-16 |
PNP general purpose transistor |
Philips |
| 27 |
LTC2327-16 |
16-Bit, 500ksps, �10.24V True Bipolar, Pseudo-Differential Input ADC with 93.5dB SNR |
Linear Technology |
| 28 |
LTC2327-18 |
18-Bit, 500ksps, �10.24V True Bipolar, Pseudo-Differential Input ADC with 95dB SNR |
Linear Technology |
| 29 |
MRAL2327-1.3 |
Microwave Power Transistor 2.3-2.7GHz |
Motorola |
| 30 |
MRAL2327-12 |
Microwave Power Transistor |
Motorola |
| | | |
