| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ACS132MS |
Radiation Hardened Quad 2-Input NAND Schmitt Trigger |
Intersil |
| 2 |
ACS32MS |
Radiation Hardened Quad 2-Input OR Gate |
Intersil |
| 3 |
AN1432MS |
Variable output, low voltage operation shunt regulator IC |
Panasonic |
| 4 |
HCS132MS |
NAND-Gate, 2-Input, Schmitt Trigger, Quad, Rad-Hard, High-Speed, CMOS, Logic |
Intersil |
| 5 |
HCS32MS |
OR-Gate, 2-Input, Quad, Rad-Hard, High-Speed, CMOS, Logic |
Intersil |
| 6 |
HCTS132MS |
Radiation Hardened Quad 2-Input NAND Schmitt Trigger |
Intersil |
| 7 |
HCTS32MS |
OR-Gate, 2-Input, TTL Inputs, Quad, Rad-Hard, High-Speed, CMOS, Logic |
Intersil |
| 8 |
MR18R1624(6,8)MN1 |
(16Mx16)*4(6/8)pcs RIMM� Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Serial Presence Detect |
Samsung Electronic |
| 9 |
MR18R1624(6,8)MN1 |
(16Mx16)*4(6/8)pcs RIMM� Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Data Sheet |
Samsung Electronic |
| 10 |
MR18R162C(G)MN0 |
(16Mx16)*12(16)pcs RIMM� Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Serial Presence Detect |
Samsung Electronic |
| 11 |
MR18R162C(G)MN0 |
(16Mx16)*12(16)pcs RIMM� Module based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Data Sheet |
Samsung Electronic |
| 12 |
MR18R326GAG0 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
| 13 |
MR18R326GAG0-CM8 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
| 14 |
MR18R326GAG0-CT9 |
(32Mx18) 16pcs RIMM Module based on 576Mb A-die, 32s banks,32K/32ms Ref, 2.5V |
Samsung Electronic |
| 15 |
SD300N32MSC |
Standard recovery diode |
International Rectifier |
| 16 |
SD300R32MSC |
Standard recovery diode |
International Rectifier |
| 17 |
SD600N32MSC |
Standard recovery diode |
International Rectifier |
| 18 |
SD600R32MSC |
Standard recovery diode |
International Rectifier |
| | | |
