| No. |
Part Name |
Description |
Manufacturer |
| 1 |
D32N6 |
Silicon diode - standard rectifier |
IPRS Baneasa |
| 2 |
D32N6 |
32A 600V Rectifier Diode |
IPRS Baneasa |
| 3 |
D32N6R |
Silicon diode - standard rectifier |
IPRS Baneasa |
| 4 |
D32N6R |
32A 600V Rectifier Diode |
IPRS Baneasa |
| 5 |
HGTA32N60E2 |
32A/ 600V N-Channel IGBT |
Intersil |
| 6 |
HGTG32N60E2 |
32A/ 600V N-Channel IGBT |
Intersil |
| 7 |
IXFK32N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 8 |
IXFN32N60 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 9 |
IXGH32N60BD1 |
HiPerFAST IGBTwith Diode |
IXYS Corporation |
| 10 |
IXGH32N60BU1 |
HiPerFAST IGBT with Diode |
IXYS Corporation |
| 11 |
IXGH32N60CD1 |
HiPerFAST IGBT with Diode |
IXYS Corporation |
| 12 |
IXGR32N60CD1 |
HiPerFAST IGBT with Diode ISOPLUS247 |
IXYS Corporation |
| 13 |
IXGT32N60BD1 |
HiPerFAST IGBTwith Diode |
IXYS Corporation |
| 14 |
IXGT32N60CD1 |
HiPerFAST IGBT with Diode |
IXYS Corporation |
| 15 |
MTT32N600 |
Thyristor power block |
IPRS Baneasa |
| 16 |
STB32N65M5 |
N-channel 650 V, 0.095 Ohm, 24 A, MDmesh(TM) V Power MOSFET in D2PAK |
ST Microelectronics |
| 17 |
STF32N65M5 |
N-channel 650 V, 0.095 Ohm, 24 A, MDmesh(TM) V Power MOSFET in TO-220FP |
ST Microelectronics |
| 18 |
STI32N65M5 |
N-channel 650 V, 0.095 Ohm, 24 A, MDmesh(TM) V Power MOSFET in I2PAK |
ST Microelectronics |
| 19 |
STP32N65M5 |
N-channel 650 V, 0.095 Ohm, 24 A, MDmesh(TM) V Power MOSFET in TO-220 |
ST Microelectronics |
| 20 |
STW32N65M5 |
N-channel 650 V, 0.095 Ohm, 24 A, MDmesh(TM) V Power MOSFET in TO-247 |
ST Microelectronics |
| 21 |
T32N600 |
Mains frequency thyristor |
IPRS Baneasa |
| 22 |
T32N600C |
Mains frequency thyristor |
IPRS Baneasa |
| 23 |
T32N600F |
Mains frequency thyristor |
IPRS Baneasa |
| | | |
