No. |
Part Name |
Description |
Manufacturer |
1 |
IR2132SPBF |
3 Phase Driver, Inverting Input, 0.8us Deadtime in a 28-lead SOIC package |
International Rectifier |
2 |
IRS2132SPBF |
3 Phase Driver, Inverting Input, 0.8us Deadtime in a 28-lead SOIC package |
International Rectifier |
3 |
M52732SP |
3-CHANNEL VIDEO AMPLIFICATION |
Mitsubishi Electric Corporation |
4 |
PBSS4032SP |
30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor |
Nexperia |
5 |
PBSS4032SP |
30 V, 4.8 A PNP/PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
6 |
PBSS4032SPN |
30 V, 5.7 A NPN/PNP low VCEsat (BISS) transistor |
Nexperia |
7 |
PBSS4032SPN |
30 V, 5.7 A NPN/PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
8 |
TC51832SP-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
9 |
TC51832SP-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
10 |
TC51832SP-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
11 |
TC51832SPL-10 |
100ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
12 |
TC51832SPL-12 |
120ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
13 |
TC51832SPL-85 |
85ns; V(in/out/dd): -1 to +7V; 600mW; 50mA; 32,768 word x 8-bit CMOS pseudo static RAM |
TOSHIBA |
14 |
XT49UR32SP4M |
Resistance Welded Holder Type Crystal Unit |
Vishay |
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