| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5FMCJ120 |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 108V(min), 132V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 2 |
1.5FMCJ350A |
Surface mount transient voltage suppressor (TVS). 1500W peak power, 5.0W steady state. Breakdown voltage 332V(min), 368V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 3 |
1.5KE120 |
108- 132V transient voltage suppressor |
DC Components |
| 4 |
1.5KE120 |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 108V(min), 132V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 5 |
1.5KE350A |
GPP transient voltage suppressor (TVS diode). 1500W peak power, 5.0W steady state. Breakdown voltage 332V(min), 368V(max). For bidirectional use C or CA suffix. |
Rectron Semiconductor |
| 6 |
2032VE |
3.3VIn-SystemProgrammableHighDensitySuperFASTPLD |
Lattice Semiconductor |
| 7 |
2032VL |
2.5VIn-SystemProgrammableSuperFASTHighDensityPLD |
Lattice Semiconductor |
| 8 |
2DB1182Q |
32V PNP MEDIUM POWER TRANSISTOR IN TO252 |
Diodes |
| 9 |
2DB1182Q-13 |
32V PNP MEDIUM POWER TRANSISTOR IN TO252 |
Diodes |
| 10 |
2SA854 |
Medium Power Transistor (-32V/ -0.5A) |
ROHM |
| 11 |
2SB1277 |
Medium power Transistor(-32V/ -2A) |
ROHM |
| 12 |
2SB822 |
Medium power Transistor(-32V/ -2A) |
ROHM |
| 13 |
2SB911M |
Medium power Transistor(-32V/ -2A) |
ROHM |
| 14 |
2SD1055 |
Medium Power Transistor 32V/ 2A |
ROHM |
| 15 |
2SD1227M |
Medium Power Transistor 32V/ 2A |
ROHM |
| 16 |
2SD1919 |
Medium Power Transistor 32V/ 2A |
ROHM |
| 17 |
30KPA130 |
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 18 |
30KPA132 |
Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 19 |
30KPA132A |
Diode TVS Single Uni-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 20 |
30KPA132C |
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 21 |
30KPA132CA |
Diode TVS Single Bi-Dir 132V 30KW 2-Pin Case P600 T/R |
New Jersey Semiconductor |
| 22 |
489D105X025A32V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 23 |
489D106X025D32V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 24 |
489D155X025B32V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 25 |
489D156X025E32V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 26 |
489D225X025B32V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 27 |
489D226X025H32V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 28 |
489D335X025C32V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 29 |
489D336X025M32V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
| 30 |
489D475X025C32V |
Resin-Coated, Radial-Lead Solid Tantalum Capacitors |
Vishay |
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