| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1134-5 |
RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS |
SGS Thomson Microelectronics |
| 2 |
1134-5 |
RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS |
ST Microelectronics |
| 3 |
1534-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
SGS Thomson Microelectronics |
| 4 |
1534-1 |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS |
ST Microelectronics |
| 5 |
1N4134-1 |
LOW CURRENT OPERATION AT 250 uA |
Compensated Devices Incorporated |
| 6 |
1N4134-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 7 |
1N4934-B |
Fast / Super-Fast / Ultra-Fast Recovery Rectifiers |
Diodes |
| 8 |
1N4934-T3 |
1.0A FAST RECOVERY RECTIFIER |
Won-Top Electronics |
| 9 |
1N4934-TB |
1.0A FAST RECOVERY RECTIFIER |
Won-Top Electronics |
| 10 |
2023-6134-10 |
8-12.4 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
| 11 |
2023-6134-10 |
Air Dielectric Directional Couplers Low Loss, Octave Bandwidth |
Tyco Electronics |
| 12 |
2031-6334-00 |
4-8 GHz, 3 dB hybrid coupler |
MA-Com |
| 13 |
2SC2334-S |
Silicon transistor |
NEC |
| 14 |
2SC2334-Z |
Silicon transistor |
NEC |
| 15 |
2SC3734-L |
Silicon transistor |
NEC |
| 16 |
2SC3734-T1B |
Silicon transistor |
NEC |
| 17 |
2SC3734-T2B |
Silicon transistor |
NEC |
| 18 |
2SC5434-T1 |
Reduced noise high frequency amplification transistor |
NEC |
| 19 |
2SK2134-Z |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 20 |
2SK2834-01 |
Power MOSFET |
Fuji Electric |
| 21 |
2SK3434-S |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 22 |
2SK3434-Z |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
NEC |
| 23 |
2SK3634-Z |
SWITCHING N-CHANNEL POWER MOSFET |
NEC |
| 24 |
30034-23 |
Geode GXm Processor Integrated x86 Solution with MMX Support |
National Semiconductor |
| 25 |
30134-23 |
Geode GXLV Processor Series Low Power Integrated x86 Solutions |
National Semiconductor |
| 26 |
3134-100M |
Pulsed Power S-Band (Si) |
Microsemi |
| 27 |
3134-180P |
Pulsed Power S-Band (Si) |
Microsemi |
| 28 |
3134-200P |
Pulsed Power S-Band (Si) |
Microsemi |
| 29 |
3134-65M |
Pulsed Power S-Band (Si) |
Microsemi |
| 30 |
3B34-00 |
Isolated 2, 3, or 4-Wire RTD Input Signal Conditioning Module |
Analog Devices |
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