No. |
Part Name |
Description |
Manufacturer |
1 |
1N1320 |
150mW Zener diode 34.5V |
Motorola |
2 |
1N1320A |
150mW Zener diode 34.5V |
Motorola |
3 |
1N5648 |
Diode TVS Single Uni-Dir 34.8V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
4 |
1N5926 |
1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
5 |
1N5926A |
1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
6 |
1N5926C |
1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
7 |
1N5926D |
1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
8 |
1N6286 |
Diode TVS Single Uni-Dir 34.8V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
9 |
AFS434S3 |
SMD 434.0MHz SAW FILTER |
ABRACON CORPORATION |
10 |
BGY588C |
550 MHz, 34.5 dB gain push-pull amplifier |
NXP Semiconductors |
11 |
BGY588N |
550 MHz, 34.5 dB gain push-pull amplifier |
Philips |
12 |
CA2830 |
34.5 dB 5-200 MHz 800 mWATT WIDEBAND LINEAR AMPLIFIERS |
Motorola |
13 |
CA2830 |
Thin Film RF Linear Hybrid Amplifier High Gain 34.5dB, 1W Output power at 28V |
TRW |
14 |
CA2830C |
CA2830C 34.5 dB, 5-200 MHz, 800 mWatt Wideband Linear Amplifiers - Archived |
Motorola |
15 |
CA2830H |
Wideband Linear Amplifier 34.5dB, 5-200MHz, 800mW |
Motorola |
16 |
CA2833 |
Wideband Linear Amplifier 34.5dB, 5-200MHz, 800mW |
Motorola |
17 |
CJF6107 |
34.000W Medium Power PNP Plastic Leaded Transistor. 70V Vceo, 7.000A Ic, 5 hFE. |
Continental Device India Limited |
18 |
D2525P878 |
Wavelength-selected isolated DFB laser module with PMF. ITU frequency 187.8. Wavelength 1596.34. Tolerance +-0.4nm. |
Agere Systems |
19 |
DSC1001CE2-034.0000 |
Clock and Timing - Oscillators |
Microchip |
20 |
DSC1001CI2-034.3000T |
Clock and Timing - Oscillators |
Microchip |
21 |
DSC1121DI5-034.3680 |
Clock and Timing - Oscillators |
Microchip |
22 |
DSC1123CI5-034.0000 |
Clock and Timing - Oscillators |
Microchip |
23 |
E2502H54 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1534.25 nm. Frequency 195.4 THz. |
Agere Systems |
24 |
FCA36N60NF |
N-Channel SupreMOS� FRFET� MOSFET 600V, 34.9A, 95m? |
Fairchild Semiconductor |
25 |
MAX-260 |
234.5V; 20A ;288KW peak pulse power; high current transient voltage suppressor |
MDE Semiconductor |
26 |
MHW1345 |
10–200 MHz, 800 mW, 24 Vdc, 34.5 dB General Purpose Linear Amplifier Module |
Freescale (Motorola) |
27 |
MHW1345 |
MHW1345 10-200 MHz, 34.5 dB, 800 mW General Purpose Linear Amplifier Module |
Motorola |
28 |
MQF34.816-1500/07 |
Monolithic Crystal Filter, Selected customer types |
Vectron |
29 |
NX8560LJ342-BC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1534.25 nm. Frequency 195.40 THz. FC-UPC connector. |
NEC |
30 |
NX8560LJ342-CC |
EA modulator integrated InGaAsP MQW DFB laser diode for 10 Gb/s DWDM applications. ITU-T wavelength 1534.25 nm. Frequency 195.40 THz. SC-UPC connector. |
NEC |
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