No. |
Part Name |
Description |
Manufacturer |
1 |
1004MP |
4 W, 35 V, 960-1215 MHz common base transistor |
GHz Technology |
2 |
1035MP |
35 W, 50 V, 1025-1150 MHz common base transistor |
GHz Technology |
3 |
1503J-35G |
Max delay 35 ns, Mechanically variable delay line |
Data Delay Devices Inc |
4 |
1513-135Y |
Delay 135 +/-6.8 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
5 |
1514-135Y |
Delay 135 +/-6.8 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
6 |
1516-35 |
35 W, 28 V, 1450-1550 MHz common base transistor |
GHz Technology |
7 |
1617-35 |
35 Watts, 28 Volts, Pulsed Radar 1540 - 1660 MHz |
GHz Technology |
8 |
1617AB35 |
35 W, 25 V, 1600-1700 MHz common emitter transistor |
GHz Technology |
9 |
1618-35 |
35 W, 28 V, 1600-1800 MHz common base transistor |
GHz Technology |
10 |
1719-35 |
35 W, 28 V, 1725-1850 MHz common base transistor |
GHz Technology |
11 |
1819-35 |
35 W, 28 V, 1750-1850 MHz common base transistor |
GHz Technology |
12 |
1819AB35 |
35 W, 25 V, 1808-1880 MHz common emitter transistor |
GHz Technology |
13 |
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
14 |
1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
15 |
1N1183 |
50 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
16 |
1N1184 |
100 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
17 |
1N1185 |
150 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
18 |
1N1186 |
200 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
19 |
1N1187 |
300 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
20 |
1N1188 |
400 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
21 |
1N1189 |
500 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
22 |
1N1190 |
600 V, 35 A standard recovery rectifier |
Solid State Devices Inc |
23 |
1N3062 |
Diode Switching 75V 0.115A 2-Pin DO-35 Box |
New Jersey Semiconductor |
24 |
1N3063 |
Diode Switching 75V 0.115A 2-Pin DO-35 Box |
New Jersey Semiconductor |
25 |
1N3064 |
Diode Switching 75V 0.115A 2-Pin DO-35 Box |
New Jersey Semiconductor |
26 |
1N3064B |
Diode Switching 75V 0.115A 2-Pin DO-35 Box |
New Jersey Semiconductor |
27 |
1N3470 |
35 V, 500 mA, gold bonded germanium diode |
BKC International Electronics |
28 |
1N360 |
Diode Switching 50V 0.2A 2-Pin DO-35 Tape and Box |
New Jersey Semiconductor |
29 |
1N360A |
Diode Switching 50V 0.2A 2-Pin DO-35 Tape and Box |
New Jersey Semiconductor |
30 |
1N361 |
Diode Switching 50V 0.2A 2-Pin DO-35 Tape and Box |
New Jersey Semiconductor |
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