| No. |
Part Name |
Description |
Manufacturer |
| 1 |
27C256E350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
| 2 |
27C256Q350_883 |
262,144--bit (32K x 8) UV erasable CMOS EPROM, 350ns |
National Semiconductor |
| 3 |
BYS459-1500 |
High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 6.5A Reverse Recovery Time 350ns |
Vishay |
| 4 |
BYS459B-1500 |
High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 6.5A Reverse Recovery Time 350ns |
Vishay |
| 5 |
BYS459F-1500 |
High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 6.5A Reverse Recovery Time 350ns |
Vishay |
| 6 |
M27256L-35 |
256K (32 x 8) UV erasable PROM, 350ns |
Intel |
| 7 |
MCM68766-35 |
350ns; V(in/out): +6 to -0.3V; 8192 x 8-bit UV erasable PROM |
Motorola |
| 8 |
MK4096N-11 |
4096x1-bit dynamic RAM, 350ns acces time, 500ns cycle time, max. power 320mW. |
Mostek |
| 9 |
MK4096P-11 |
4096x1-bit dynamic RAM, 350ns acces time, 500ns cycle time, max. power 320mW. |
Mostek |
| 10 |
NTE2102 |
Integrated Circuit NMOS, 1K Static RAM (SRAM), 350ns |
NTE Electronics |
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