| No. |
Part Name |
Description |
Manufacturer |
| 1 |
M27C1001-35L6TR |
1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 2 |
M27C1001-35L6X |
1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 3 |
M27C4001-35L6TR |
4 Mbit (512Kb x 8) EPROM, 35ns |
SGS Thomson Microelectronics |
| 4 |
M27C4001-35L6TR |
4 Mbit 512Kb x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 5 |
M27C4001-35L6X |
4 Mbit (512Kb x 8) EPROM, 35ns |
SGS Thomson Microelectronics |
| 6 |
M27C4001-35L6X |
4 Mbit 512Kb x 8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 7 |
T35L6432A-5Q |
0.5 to 4.6V; 1.6W; 64K x 32 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter |
TM Technology |
| 8 |
T35L6432A-5T |
0.5 to 4.6V; 1.6W; 64K x 32 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter |
TM Technology |
| 9 |
T35L6432B |
64K x 32 SRAM |
Taiwan Memory Technology |
| 10 |
T35L6432B-10Q |
64K x 32 SRAM |
Taiwan Memory Technology |
| 11 |
T35L6432B-10Q |
0.5 to 4.6V; 1.6W; 64K x 32 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter |
TM Technology |
| 12 |
T35L6432B-12T |
64K x 32 SRAM |
Taiwan Memory Technology |
| 13 |
T35L6432B-12T |
0.5 to 4.6V; 1.6W; 64K x 32 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter |
TM Technology |
| 14 |
T35L6464A |
64K x 64 SRAM |
Taiwan Memory Technology |
| 15 |
T35L6464A-5L |
64K x 64 SRAM |
Taiwan Memory Technology |
| 16 |
T35L6464A-5L |
0.5 to 4.6V; 1.6W; 64K x 64 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter |
TM Technology |
| 17 |
T35L6464A-5Q |
64K x 64 SRAM |
Taiwan Memory Technology |
| 18 |
T35L6464A-5Q |
0.5 to 4.6V; 1.6W; 64K x 64 SRAM: 3.3V supply, fully registered inputs and outputs, burst counter |
TM Technology |
| | | |
