| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N2535N3 |
350V N-channel depletion - Mode vertical DMOS FET |
Supertex Inc |
| 2 |
DN2535N3 |
N-Channel Depletion-Mode Vertical DMOS FETs |
Supertex Inc |
| 3 |
DN2535N3-G |
Depletion Mode MOSFETs |
Microchip |
| 4 |
DN2535N3-G-P003 |
Depletion Mode MOSFETs |
Microchip |
| 5 |
DN2535N3-G-P013 |
Depletion Mode MOSFETs |
Microchip |
| 6 |
EDI88512CA35N36B |
35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 |
White Electronic Designs |
| 7 |
EDI88512CA35N36C |
35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 |
White Electronic Designs |
| 8 |
EDI88512CA35N36I |
35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 |
White Electronic Designs |
| 9 |
EDI88512CA35N36M |
35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 |
White Electronic Designs |
| 10 |
EDI88512LPA35N36B |
35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 |
White Electronic Designs |
| 11 |
EDI88512LPA35N36C |
35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 |
White Electronic Designs |
| 12 |
EDI88512LPA35N36I |
35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 |
White Electronic Designs |
| 13 |
EDI88512LPA35N36M |
35ns; 5V power supply; 512K x 8 monolithic SRAM, SMD 5962-95600 |
White Electronic Designs |
| 14 |
IXFH35N30 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 15 |
IXFM35N30 |
Discrete MOSFETs: HiPerFET Power MOSFETS |
IXYS |
| 16 |
IXTH35N30 |
MegaMOSTMFET |
IXYS Corporation |
| 17 |
M27C1001-35N3TR |
1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 18 |
M27C1001-35N3X |
1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 19 |
M27C1024-35N3TR |
1-Mbit (64Kb x16) OTP EPROM, 35ns |
SGS Thomson Microelectronics |
| 20 |
M27C1024-35N3TR |
1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
ST Microelectronics |
| 21 |
M27C1024-35N3X |
1 Mbit 64Kb x16 UV EPROM and OTP EPROM |
ST Microelectronics |
| 22 |
STD35N3LH5 |
N-channel 30 V, 14 mOhm;, 35 A, DPAK STripFET(TM); V Power MOSFET |
ST Microelectronics |
| 23 |
STGB35N35LZ |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 24 |
STGB35N35LZ-1 |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 25 |
STGB35N35LZT4 |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 26 |
STGP35N35LZ |
Automotive-grade 345 V internally clamped IGBT, EAS 450 mJ |
ST Microelectronics |
| 27 |
TP2535N3 |
P-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 28 |
TP2635N3 |
P-Channel Enhancement-Mode Vertical DMOS FETs |
Supertex Inc |
| 29 |
TP2635N3-G |
P-Channel Enhancement Mode MOSFETs |
Microchip |
| 30 |
VP0535N3 |
P-CHANNEL ENHANCEMENT MODE D MOS FETS |
etc |
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