| No. |
Part Name |
Description |
Manufacturer |
| 1 |
K7A163600M K7A161800M |
512K x 36 & 1M x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
| 2 |
K7A323600M |
1Mx36 & 2Mx18 Synchronous SRAM |
Samsung Electronic |
| 3 |
K7A323600M K7A321800M |
1Mx36 & 2Mx18-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
| 4 |
K7A323600M-QC14 |
1Mx36 & 2Mx18 Synchronous SRAM |
Samsung Electronic |
| 5 |
K7A323600M-QC14 |
1Mx36 & 2Mx18 Synchronous SRAM |
Samsung Electronic |
| 6 |
K7A323600M-QC20 |
1Mx36 & 2Mx18 Synchronous SRAM |
Samsung Electronic |
| 7 |
K7A323600M-QC20 |
1Mx36 & 2Mx18 Synchronous SRAM |
Samsung Electronic |
| 8 |
K7A323600M-QC25 |
1Mx36 & 2Mx18 Synchronous SRAM |
Samsung Electronic |
| 9 |
K7A323600M-QC25 |
1Mx36 & 2Mx18 Synchronous SRAM |
Samsung Electronic |
| 10 |
K7A803600M |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
| 11 |
LM13600M |
Dual Operational Transconductance Amplifiers with Linearizing Diodes and Buffers |
National Semiconductor |
| 12 |
LM53600MQDSXRQ1 |
3.5V to 36V, 650mA Synchronous 2.1MHz Step-Down Converter for Automotive Applications 10-WSON -40 to 150 |
Texas Instruments |
| 13 |
LM53600MQDSXTQ1 |
3.5V to 36V, 650mA Synchronous 2.1MHz Step-Down Converter for Automotive Applications 10-WSON -40 to 150 |
Texas Instruments |
| 14 |
MA83600M |
Silicon planar type |
Panasonic |
| 15 |
MAZ33600M |
Silicon planar type |
Panasonic |
| 16 |
MAZS3600M |
Silicon planar type |
Panasonic |
| 17 |
NJM13600M |
DUAL OPERATIONAL TRANSCONDUCTANCE AMPLIFIER���� |
New Japan Radio |
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