| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3609 |
Silicon Signal Diode |
Motorola |
| 2 |
2N3609 |
P-Channel FIELD-EFFECT TRANSISTOR MOS FET |
Motorola |
| 3 |
2SC3609 |
Silicon NPN epitaxial planar type transistor, marking MH |
TOSHIBA |
| 4 |
81036092A |
Standard High-Speed PAL<R> Circuits |
Texas Instruments |
| 5 |
8103609RA |
Standard High-Speed PAL<R> Circuits |
Texas Instruments |
| 6 |
8103609SA |
Standard High-Speed PAL<R> Circuits |
Texas Instruments |
| 7 |
AP3609 |
EIGHT-CHANNEL CONSTANT CURRENT SINK WITH CURRENT MATCH |
Diodes |
| 8 |
AP3609MTR-G1 |
EIGHT-CHANNEL CONSTANT CURRENT SINK WITH CURRENT MATCH |
Diodes |
| 9 |
HA13609ANT |
Three-Phase Brushless Motor Driver |
Hitachi Semiconductor |
| 10 |
K7A403609A |
128K x 36-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
| 11 |
K7A403609B |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
| 12 |
K7A403609B K7A403209B K7A401809B |
128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
| 13 |
K7A403609B-QC |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
| 14 |
K7A803609A |
256Kx36Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
| 15 |
K7A803609B |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
| 16 |
K7A803609B / K7A801809B |
256Kx36 & 256Kx32 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
| 17 |
K7A803609B-QC25 |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM |
Samsung Electronic |
| 18 |
K7N403609A |
128Kx36-Bit Pipelined NtRAM� Data Sheet |
Samsung Electronic |
| 19 |
K7N403609B |
128Kx36 & 256Kx18 Pipelined NtRAMTM |
Samsung Electronic |
| 20 |
K7N403609B K7N403209B K7N401809B |
128Kx36 & 128Kx32 & 256Kx18-Bit Pipelined NtRAM� Data Sheet |
Samsung Electronic |
| 21 |
K7N403609B-QC20 |
128Kx36 & 256Kx18 Pipelined NtRAMTM |
Samsung Electronic |
| 22 |
K7N403609B-QC20 |
128Kx36 & 256Kx18 Pipelined NtRAM |
Samsung Electronic |
| 23 |
K7N803609B K7N803209B K7N801809B |
256Kx36 & 256Kx32 & 512Kx18 Pipelined NtRAM� Data Sheet |
Samsung Electronic |
| 24 |
K7N803609B-QC25 |
256Kx36 & 512Kx18-Bit Pipelined NtRAMTM |
Samsung Electronic |
| 25 |
LTC3609 |
32V, 6A Monolithic Synchronous Step-Down DC/DC Converter |
Linear Technology |
| 26 |
LTC3609EWKG#PBF |
32V, 6A Monolithic Synchronous Step-Down DC/DC Converter |
Linear Technology |
| 27 |
LTC3609EWKG#TRPBF |
32V, 6A Monolithic Synchronous Step-Down DC/DC Converter |
Linear Technology |
| 28 |
LTC3609IWKG#PBF |
32V, 6A Monolithic Synchronous Step-Down DC/DC Converter |
Linear Technology |
| 29 |
LTC3609IWKG#TRPBF |
32V, 6A Monolithic Synchronous Step-Down DC/DC Converter |
Linear Technology |
| 30 |
REC3-3609SRW |
3W DC/DC converter with 36V input, 9V/330mA output |
Recom International Power |
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