No. |
Part Name |
Description |
Manufacturer |
1 |
1N3671 |
Silicon-Power Rectifiers |
Diotec Elektronische |
2 |
1N3671 |
Standard Rectifier (trr more than 500ns) |
Microsemi |
3 |
1N3671 |
Rectifier Diode 12A 800V |
Motorola |
4 |
1N3671A |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
5 |
1N3671A |
800V 12A Std. Recovery Diode in a DO-203AA (DO-4)package |
International Rectifier |
6 |
1N3671A |
Standard Rectifier (trr more than 500ns) |
Microsemi |
7 |
1N3671A |
Rectifier Diode 12A 800V |
Motorola |
8 |
1N3671A |
Diode Switching 800V 22A 2-Pin DO-4 |
New Jersey Semiconductor |
9 |
1N3671AR |
High Power Standard Recovery Rectifiers - DO4 Stud Devices |
America Semiconductor |
10 |
1N3671AR |
Standard Rectifier (trr more than 500ns) |
Microsemi |
11 |
1N3671AR |
Diode Switching 800V 22A 2-Pin DO-4 |
New Jersey Semiconductor |
12 |
1N3671RA |
Military Silicon Power Rectifier |
Microsemi |
13 |
2N3671 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
14 |
2N3671 |
Silicon PNP Transistor |
Motorola |
15 |
2SC3671 |
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
16 |
CY3671 |
EZ-USB FX Xcelerator development kit. |
Cypress |
17 |
ITT3671 |
High-Speed Dual Sense Amplifier |
ITT Semiconductors |
18 |
JAN1N3671A |
Standard Rectifier (trr more than 500ns) |
Microsemi |
19 |
JAN1N3671AR |
Standard Rectifier (trr more than 500ns) |
Microsemi |
20 |
JAN1N3671RA |
12A silicon power rectifier, 800V |
Microsemi |
21 |
JANTX1N3671A |
Standard Rectifier (trr more than 500ns) |
Microsemi |
22 |
JANTX1N3671AR |
Standard Rectifier (trr more than 500ns) |
Microsemi |
23 |
JANTX1N3671RA |
12A silicon power rectifier, 800V |
Microsemi |
24 |
JANTX1NV3671A |
12A silicon power rectifier, 800V |
Microsemi |
25 |
JANTX1NV3671RA |
12A silicon power rectifier, 800V |
Microsemi |
26 |
JANTXV1N3671A |
Standard Rectifier (trr more than 500ns) |
Microsemi |
27 |
JANTXV1N3671AR |
Standard Rectifier (trr more than 500ns) |
Microsemi |
28 |
K7D803671B |
256Kx36 & 512Kx18 SRAM |
Samsung Electronic |
29 |
K7D803671B-HC25 |
256Kx36 & 512Kx18 SRAM |
Samsung Electronic |
30 |
K7D803671B-HC30 |
256Kx36 & 512Kx18 SRAM |
Samsung Electronic |
| | | |