| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2023-6137-10 |
12.4-18 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
| 2 |
2023-6137-10 |
Air Dielectric Directional Couplers Low Loss, Octave Bandwidth |
Tyco Electronics |
| 3 |
2CW37-10 |
PLANAR ZENER DIODE ZENER VOLTAGE: 2.0-36V POWER: 500mW |
Shanghai Sunrise Electronics |
| 4 |
BC337-10 |
Silicon NPN Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
| 5 |
BC337-10 |
NPN Medium Power Transistor |
National Semiconductor |
| 6 |
BC637-10 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 7 |
BD137-10 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 63 - 160 hFE. Complementary BD138-10 |
Continental Device India Limited |
| 8 |
BD137-10 |
NPN High-speed, medium power, general purpose transistor, plastic case |
IPRS Baneasa |
| 9 |
BD137-10 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 10 |
BD137-10 |
1.5A plastic 10W medium power silicon NPN transistor |
Motorola |
| 11 |
BD137-10 |
NPN power transistors |
Philips |
| 12 |
BD137-10 |
NPN Silicon Transistor for AF driver and power stages of medium output |
Siemens |
| 13 |
BD137-10 |
NPN SILICON TRANSISTORS |
Siemens |
| 14 |
BD138-10 |
12.500W Switching PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 63 - 160 hFE. Complementary BD137-10 |
Continental Device India Limited |
| 15 |
BD237-10 |
NPN High-speed, medium power, general purpose transistor, plastic case |
IPRS Baneasa |
| 16 |
BD437-10 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
| 17 |
BUK9637-100E |
N-channel TrenchMOS logic level FET |
Nexperia |
| 18 |
BUK9637-100E |
N-channel TrenchMOS logic level FET |
NXP Semiconductors |
| 19 |
SMV20437-10 |
VBR:15V min; 250mW; surface mount 2043 series hyperabrupt tuning diode |
Knox Semiconductor Inc |
| | | |
