| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2CW37-16 |
PLANAR ZENER DIODE ZENER VOLTAGE: 2.0-36V POWER: 500mW |
Shanghai Sunrise Electronics |
| 2 |
BC337-16 |
Silicon NPN Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
| 3 |
BC337-16 |
0.625W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.800A Ic, 100 - 250 hFE |
Continental Device India Limited |
| 4 |
BC337-16 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 5 |
BC337-16 |
NPN General Purpose Amplifier |
Fairchild Semiconductor |
| 6 |
BC337-16 |
Small Signal Transistor (NPN) |
General Semiconductor |
| 7 |
BC337-16 |
NPN Low-Power General Purpose Transistor - plastic case |
IPRS Baneasa |
| 8 |
BC337-16 |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 9 |
BC337-16 |
Low frequency transistor |
mble |
| 10 |
BC337-16 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 11 |
BC337-16 |
Amplifier Transistor |
Motorola |
| 12 |
BC337-16 |
NPN Medium Power Transistor |
National Semiconductor |
| 13 |
BC337-16 |
Transistor Silicon Plastic NPN |
ON Semiconductor |
| 14 |
BC337-16 |
NPN general purpose transistor |
Philips |
| 15 |
BC337-16 |
NPN Silicon Transistor for AF driver stages as well as for universal applications |
Siemens |
| 16 |
BC337-16 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 17 |
BC337-16 |
Discrete Devices-Transistor-NPN Bipolar Transistor |
Taiwan Semiconductor |
| 18 |
BC337-16 |
Transistors, RF & AF |
Vishay |
| 19 |
BC337-16RL1 |
Transistor Silicon Plastic NPN |
ON Semiconductor |
| 20 |
BC337-16ZL1 |
Transistor Silicon Plastic NPN |
ON Semiconductor |
| 21 |
BC637-16 |
0.800W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 25 - hFE |
Continental Device India Limited |
| 22 |
BC637-16 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 23 |
BC637-16 |
NPN medium power transistors |
Philips |
| 24 |
BD137-16 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 100 - 250 hFE. Complementary BD138-16 |
Continental Device India Limited |
| 25 |
BD137-16 |
NPN High-speed, medium power, general purpose transistor, plastic case |
IPRS Baneasa |
| 26 |
BD137-16 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 27 |
BD137-16 |
1.5A plastic 10W medium power silicon NPN transistor |
Motorola |
| 28 |
BD137-16 |
NPN power transistors |
Philips |
| 29 |
BD138-16 |
12.500W Switching PNP Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 100 - 250 hFE. Complementary BD137-16 |
Continental Device India Limited |
| 30 |
BD237-16 |
NPN High-speed, medium power, general purpose transistor, plastic case |
IPRS Baneasa |
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