| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4938-1 |
200 V, 500 mW silicon switching diode |
BKC International Electronics |
| 2 |
1N4938-1 |
Signal or Computer Diode |
Microsemi |
| 3 |
1N938-1 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 4 |
1N938-1E3 |
Temperature Compensated Zeners (TCZ) |
Microsemi |
| 5 |
62038-101 |
GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE |
Micropac Industries |
| 6 |
62038-102 |
GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE |
Micropac Industries |
| 7 |
62038-103 |
GaAs LIGHT EMITTING DIODE, TO-46 PACKAGE |
Micropac Industries |
| 8 |
ACT4438 |
ACT4438-1 Transceiver for MIL-STD-1553 / 1760 in a Chipscale Package |
Aeroflex Circuit Technology |
| 9 |
ACT4438-1 |
ACT4438-1 Transceiver for MIL-STD-1553 / 1760 in a Chipscale Package |
Aeroflex Circuit Technology |
| 10 |
ACT4438-1 |
ACT4438-1 Transceiver for MIL-STD-1553 / 1760 in a Chipscale Package |
Aeroflex Circuit Technology |
| 11 |
ADA4638-1 |
30V Auto-zero, Rail-to-Rail Output Precision Amplifier |
Analog Devices |
| 12 |
ADA4938-1 |
Ultralow Distortion Differential ADC Driver (Single) |
Analog Devices |
| 13 |
AS338-12 |
GaAs IC SPDT Switch Non-Reflective DC-2.5 GHz |
Skyworks Solutions |
| 14 |
AS338-12LF |
GaAs IC SPDT Nonreflective Switch 300 kHz-2.5 GHz |
Skyworks Solutions |
| 15 |
BC338-16 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 16 |
BC338-16 |
Small Signal Transistor (NPN) |
General Semiconductor |
| 17 |
BC338-16 |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 18 |
BC338-16 |
Low frequency transistor |
mble |
| 19 |
BC338-16 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 20 |
BC338-16 |
Amplifier Transistor |
Motorola |
| 21 |
BC338-16 |
Amplifier Transistors(NPN Silicon) |
ON Semiconductor |
| 22 |
BC338-16 |
NPN Silicon Transistor for AF driver stages as well as for universal applications |
Siemens |
| 23 |
BC338-16 |
NPN Silicon AF Transistors (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 24 |
BC338-16 |
Discrete Devices-Transistor-NPN Bipolar Transistor |
Taiwan Semiconductor |
| 25 |
BC338-16 |
Transistors, RF & AF |
Vishay |
| 26 |
BC638-10 |
0.800W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 25 - hFE |
Continental Device India Limited |
| 27 |
BC638-10 |
PNP medium power transistors |
Philips |
| 28 |
BC638-16 |
0.800W General Purpose PNP Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 25 - hFE |
Continental Device India Limited |
| 29 |
BC638-16 |
PNP medium power transistors |
Philips |
| 30 |
BD137-10 |
12.500W Switching NPN Plastic Leaded Transistor. 60V Vceo, 1.500A Ic, 63 - 160 hFE. Complementary BD138-10 |
Continental Device India Limited |
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