| No. |
Part Name |
Description |
Manufacturer |
| 1 |
DS90C385MTD |
+3.3V Programmable LVDS Transmitter 24-Bit Flat Panel Display (FPD) Link-85 MHz/ +3.3V Programmable LVDS Transmitter 18-Bit Flat Panel Display (FPD) L |
National Semiconductor |
| 2 |
DS90C385MTDX |
+3.3V Programmable LVDS Transmitter 24-Bit Flat Panel Display (FPD) Link-85 MHz |
National Semiconductor |
| 3 |
FCD9N60NTM |
N-Channel SupreMOS� MOSFET 600V, 9A, 385m? |
Fairchild Semiconductor |
| 4 |
FCP9N60N |
N-Channel SupreMOS� MOSFET 600V, 9A, 385m? |
Fairchild Semiconductor |
| 5 |
FCPF9N60NT |
N-Channel SupreMOS� MOSFET 600V, 9A, 385m? |
Fairchild Semiconductor |
| 6 |
FIN3385MTD |
Low Voltage 28-Bit Flat Panel Display Link Serializers |
Fairchild Semiconductor |
| 7 |
FIN3385MTDX |
Low Voltage 28-Bit Flat Panel Display Link Serializers |
Fairchild Semiconductor |
| 8 |
KM44C256C-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 9 |
KM44C256C-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 10 |
KM44C256C-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 11 |
KM44C256CL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 12 |
KM44C256CL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 13 |
KM44C256CL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 14 |
KM44C256CSL-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 15 |
KM44C256CSL-7 |
70ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 16 |
KM44C256CSL-8 |
80ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 17 |
KM44C256D-6 |
60ns; V(cc/in/out): -1.0 to 7.0V; 385mW; 50mA; 256K x 4-bit CMOS dynamic RAM with fast page mode |
Samsung Electronic |
| 18 |
LC7385M |
DTMF Receiver |
SANYO |
| 19 |
LM385M |
Adjustable Micropower Voltage Reference |
National Semiconductor |
| 20 |
LM385M |
Adjustable Micropower Voltage Reference 8-SOIC 0 to 70 |
Texas Instruments |
| 21 |
LM385M-1.2 |
Micropower Voltage Reference Diode |
National Semiconductor |
| 22 |
LM385M-1.2 |
Micropower Voltage Reference Diode 8-SOIC 0 to 70 |
Texas Instruments |
| 23 |
LM385M-1.2/NOPB |
Micropower Voltage Reference Diode 8-SOIC 0 to 70 |
Texas Instruments |
| 24 |
LM385M-2.5 |
Micropower Voltage Reference Diode |
National Semiconductor |
| 25 |
LM385M-2.5/NOPB |
Micropower Voltage Reference Diode 8-SOIC 0 to 70 |
Texas Instruments |
| 26 |
LM385M/NOPB |
Adjustable Micropower Voltage Reference 8-SOIC 0 to 70 |
Texas Instruments |
| 27 |
LM385M3-1.2 |
Micropower Voltage Reference Diode |
National Semiconductor |
| 28 |
LM385M3-1.2 |
Micropower Voltage Reference Diode 3-SOT-23 0 to 70 |
Texas Instruments |
| 29 |
LM385M3-1.2/NOPB |
Micropower Voltage Reference Diode 3-SOT-23 0 to 70 |
Texas Instruments |
| 30 |
LM385M3-2.5 |
Micropower Voltage Reference Diode |
National Semiconductor |
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