| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BC639-10 |
0.800W General Purpose NPN Plastic Leaded Transistor. 80V Vceo, 1.000A Ic, 25 - hFE |
Continental Device India Limited |
| 2 |
BC639-10 |
TO-92 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 3 |
BC639-10 |
NPN medium power transistors |
Philips |
| 4 |
BD139-10 |
12.500W Switching NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 63 - 160 hFE. Complementary BD140-10 |
Continental Device India Limited |
| 5 |
BD139-10 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 6 |
BD139-10 |
1.5A plastic 10W medium power silicon NPN transistor |
Motorola |
| 7 |
BD139-10 |
NPN power transistors |
Philips |
| 8 |
BD139-10 |
NPN Silicon Transistor for AF driver and power stages of medium output |
Siemens |
| 9 |
BD139-10 |
NPN SILICON TRANSISTORS |
Siemens |
| 10 |
BD139-10 |
NPN SILICON TRANSISTORS |
ST Microelectronics |
| 11 |
BD140-10 |
12.500W Switching PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 63 - 160 hFE. Complementary BD139-10 |
Continental Device India Limited |
| 12 |
BYX39-1000 |
Controlled avalanche diode |
mble |
| 13 |
BYX39-1000 |
Silicon avalanche rectifier diode |
Mullard |
| 14 |
BYX39-1000 |
Controlled Avalanche Rectifier Diode, normal polarity 1000V |
Philips |
| 15 |
BYX39-1000R |
Controlled avalanche diode |
mble |
| 16 |
BYX39-1000R |
Silicon avalanche rectifier diode, reverse polarity (stud-anode) |
Mullard |
| 17 |
BYX39-1000R |
Controlled Avalanche Rectifier Diode, reverse polarity 1000V |
Philips |
| 18 |
DS1239-10 |
MicroManager Chip |
Dallas Semiconductor |
| 19 |
DS1239-10 |
MicroManager Chip |
MAXIM - Dallas Semiconductor |
| 20 |
DS1239-10+ |
MicroManager Chip |
MAXIM - Dallas Semiconductor |
| 21 |
PSMN039-100YS |
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET |
Nexperia |
| 22 |
PSMN039-100YS |
N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET |
NXP Semiconductors |
| | | |
