| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1SR139-600 |
Diodes > Rectifier Diodes > Leaded type |
ROHM |
| 2 |
BD139-6 |
12.500W Switching NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - 100 hFE. Complementary BD140-6 |
Continental Device India Limited |
| 3 |
BD139-6 |
NPN High-speed, medium power, general purpose transistor, plastic case |
IPRS Baneasa |
| 4 |
BD139-6 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 5 |
BD139-6 |
1.5A plastic 10W medium power silicon NPN transistor |
Motorola |
| 6 |
BD139-6 |
NPN Silicon Transistor for AF driver and power stages of medium output |
Siemens |
| 7 |
BD139-6 |
NPN SILICON TRANSISTORS |
Siemens |
| 8 |
BD140-6 |
12.500W Switching PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - 100 hFE. Complementary BD139-6 |
Continental Device India Limited |
| 9 |
BD439-6 |
NPN medium power, general purpose transistor - plastic case |
IPRS Baneasa |
| 10 |
BDY39-6 |
NPN transistor for high-performance NF power amplifiers |
Siemens |
| 11 |
BSW39-6 |
Silicon NPN Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
| 12 |
BT139-600 |
4Q Triac |
NXP Semiconductors |
| 13 |
BT139-600 |
Triacs |
Philips |
| 14 |
BT139-600E |
4Q Triac |
NXP Semiconductors |
| 15 |
BT139-600E |
Triacs sensitive gate |
Philips |
| 16 |
BT139-600F |
Triacs |
Philips |
| 17 |
BT139-600G |
Triacs |
Philips |
| 18 |
BT139-600H |
Triacs high noise immunity |
Philips |
| 19 |
BYX39-600 |
Controlled avalanche diode |
mble |
| 20 |
BYX39-600 |
Silicon avalanche rectifier diode |
Mullard |
| 21 |
BYX39-600 |
Controlled Avalanche Rectifier Diode, normal polarity 600V |
Philips |
| 22 |
BYX39-600R |
Controlled avalanche diode |
mble |
| 23 |
BYX39-600R |
Silicon avalanche rectifier diode, reverse polarity (stud-anode) |
Mullard |
| 24 |
BYX39-600R |
Controlled Avalanche Rectifier Diode, reverse polarity 600V |
Philips |
| 25 |
MCR39-60 |
Thyristor 7A RMS, 600V |
Motorola |
| | | |
