| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3905 |
Rectifier Diode 6A |
Motorola |
| 2 |
2N3905 |
Leaded Small Signal Transistor General Purpose |
Central Semiconductor |
| 3 |
2N3905 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 30 - hFE |
Continental Device India Limited |
| 4 |
2N3905 |
Si-Epitaxial PlanarTransistors |
Diotec Elektronische |
| 5 |
2N3905 |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 6 |
2N3905 |
Low Noise PNP Transistor |
FERRANTI |
| 7 |
2N3905 |
Switching PNP transistor |
FERRANTI |
| 8 |
2N3905 |
Planar epitaxial PNP silicon transistor. -40V, 200mA. |
General Electric Solid State |
| 9 |
2N3905 |
PNP Silicon Epitaxial Planar Transistor |
Honey Technology |
| 10 |
2N3905 |
PNP silicon general purpose switching and amplifier transistor |
ITT Semiconductors |
| 11 |
2N3905 |
PNP SILICON PLANAR EPITAXIAL TRANSISTORS |
Micro Electronics |
| 12 |
2N3905 |
PNP silicon annular transistor, TO-92 case |
Motorola |
| 13 |
2N3905 |
Silicon PNP Transistor |
Motorola |
| 14 |
2N3905 |
PNP Transistor - General Purpose AMPS and Switches |
National Semiconductor |
| 15 |
2N3905 |
PNP Silicon Transistor |
NEC |
| 16 |
2N3905 |
General Purpose Transistors(PNP Silicon) |
ON Semiconductor |
| 17 |
2N3905 |
PNP EPITAXIAL SILICON TRANSISTOR |
Samsung Electronic |
| 18 |
2N3905 |
NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications |
Semtech |
| 19 |
2N3905 |
Silicon NPN epitaxial transistor (PCT Process) |
TOSHIBA |
| 20 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 21 |
2N3905-D |
General Purpose Transistors PNP Silicon |
ON Semiconductor |
| 22 |
2N3905BU |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 23 |
2N3905TA |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 24 |
2N3905TAR |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 25 |
2N3905TF |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 26 |
2N3905TFR |
PNP General Purpose Amplifier |
Fairchild Semiconductor |
| 27 |
5962-87539053X |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 28 |
5962-8753905LA |
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to +7.0V; Vcc power supply: 5V +-10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device |
Atmel |
| 29 |
A5T3905 |
PNP Silicon Transistor |
Texas Instruments |
| 30 |
CMBT3905 |
SILICON EPITAXIAL TRANSISTOR |
Continental Device India Limited |
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