| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1837 |
2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 2 |
1838 |
2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit |
SGS Thomson Microelectronics |
| 3 |
2023-16 |
2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 4 |
2023-6 |
2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications |
SGS Thomson Microelectronics |
| 5 |
2223-10 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 6 |
2223-14 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 7 |
2223-18 |
2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 8 |
2223-3 |
2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
| 9 |
2301 |
2.3GHz 1W 22V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 10 |
2304 |
2.3GHz 4W 20V microwave power transistor for class C applications |
SGS Thomson Microelectronics |
| 11 |
2N5583 |
PNP silicon high frequency transistor 1.3GHz - 100mAdc |
Motorola |
| 12 |
2N6268 |
2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
| 13 |
2N6269 |
2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor |
RCA Solid State |
| 14 |
3GH45 |
SILICON DIFFUSED TYPE (SWITCHING TYPE POWER SUPPLY APPLICATIONS) |
TOSHIBA |
| 15 |
40898 |
6W 2.3GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 16 |
40899 |
2W 2.3GHz Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
| 17 |
71M6543GH |
Energy Meter ICs |
MAXIM - Dallas Semiconductor |
| 18 |
71M6543GHT |
Energy Meter ICs |
MAXIM - Dallas Semiconductor |
| 19 |
71M6543GHT-IGT/F |
Energy Meter ICs |
MAXIM - Dallas Semiconductor |
| 20 |
71M6543GHT-IGTR/F |
Energy Meter ICs |
MAXIM - Dallas Semiconductor |
| 21 |
82223-12 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 22 |
82223-18 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 23 |
82223-20 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 24 |
82223-4 |
Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz |
SGS Thomson Microelectronics |
| 25 |
ADL5330 |
1MHz to 3GHz VGA with 60dB Gain Control Range |
Analog Devices |
| 26 |
ADL5330-EVAL |
1MHz to 3GHz VGA with 60dB Gain Control Range |
Analog Devices |
| 27 |
ADL5330ACPZ-R2 |
1MHz to 3GHz VGA with 60dB Gain Control Range |
Analog Devices |
| 28 |
ADL5330ACPZ-REEL7 |
1MHz to 3GHz VGA with 60dB Gain Control Range |
Analog Devices |
| 29 |
ADL5330ACPZ-WP |
1MHz to 3GHz VGA with 60dB Gain Control Range |
Analog Devices |
| 30 |
ADV7625 |
3GHz HDMI 5:2 cross point Transceiver with On-Screen Display |
Analog Devices |
| | | |
