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Datasheets for 3GHZ

Datasheets found :: 323
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1837 2.3GHz 2W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit SGS Thomson Microelectronics
2 1838 2.3GHz 3W 20V NPN silicon transistor suited for applications in S-Band power oscillator circuit SGS Thomson Microelectronics
3 2023-16 2.0-2.3GHz 16W 24V NPN microwave power transistor for Class C applications SGS Thomson Microelectronics
4 2023-6 2.0-2.3GHz 6W 24V NPN microwave power transistor for Class C applications SGS Thomson Microelectronics
5 2223-10 2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications SGS Thomson Microelectronics
6 2223-14 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
7 2223-18 2.2-2.3GHz 18W 24V NPN silicon transistor designed for microwave applications SGS Thomson Microelectronics
8 2223-3 2.2-2.3GHz 3W 24V NPN silicon transistor designed for microwave applications SGS Thomson Microelectronics
9 2301 2.3GHz 1W 22V microwave power transistor for class C applications SGS Thomson Microelectronics
10 2304 2.3GHz 4W 20V microwave power transistor for class C applications SGS Thomson Microelectronics
11 2N5583 PNP silicon high frequency transistor 1.3GHz - 100mAdc Motorola
12 2N6268 2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
13 2N6269 2.3GHz Emitter-Ballasted Silicon NPN Overlay RF Transistor RCA Solid State
14 40898 6W 2.3GHz Emitter-Ballasted Silicon NPN Overlay Transistor RCA Solid State
15 40899 2W 2.3GHz Emitter-Ballasted Silicon NPN Overlay Transistor RCA Solid State
16 82223-12 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
17 82223-18 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
18 82223-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
19 82223-4 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
20 ADL5330 1MHz to 3GHz VGA with 60dB Gain Control Range Analog Devices
21 ADL5330-EVAL 1MHz to 3GHz VGA with 60dB Gain Control Range Analog Devices
22 ADL5330ACPZ-R2 1MHz to 3GHz VGA with 60dB Gain Control Range Analog Devices
23 ADL5330ACPZ-REEL7 1MHz to 3GHz VGA with 60dB Gain Control Range Analog Devices
24 ADL5330ACPZ-WP 1MHz to 3GHz VGA with 60dB Gain Control Range Analog Devices
25 AM82223-004 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
26 AM82223-012 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
27 AM82223-014 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
28 AM82223-018 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
29 AM82223-020 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
30 BAR63-07L4 Diodes for switching applications up to 3GHz Infineon


Datasheets found :: 323
Page: | 1 | 2 | 3 | 4 | 5 |



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