No. |
Part Name |
Description |
Manufacturer |
1 |
CAT25C03LE-1.8TE13 |
1K/2K/4K/8K/16K SPI Serial CMOS EEPROM |
Catalyst Semiconductor |
2 |
CAT25C03LE-TE13 |
1K/2K/4K/8K/16K SPI Serial CMOS EEPROM |
Catalyst Semiconductor |
3 |
DMP6023LE-13 |
60V P-CHANNEL ENHANCEMENT MODE MOSFET |
Diodes |
4 |
DS1123LE-100+ |
3.3V, 8-Bit, Programmable Timing Element |
MAXIM - Dallas Semiconductor |
5 |
DS1123LE-200 |
3.3V, 8-Bit, Programmable Timing Element |
MAXIM - Dallas Semiconductor |
6 |
DS1123LE-200+ |
3.3V, 8-Bit, Programmable Timing Element |
MAXIM - Dallas Semiconductor |
7 |
DS1123LE-25+ |
3.3V, 8-Bit, Programmable Timing Element |
MAXIM - Dallas Semiconductor |
8 |
DS1123LE-50+ |
3.3V, 8-Bit, Programmable Timing Element |
MAXIM - Dallas Semiconductor |
9 |
DS1123LE-50+W |
3.3V, 8-Bit, Programmable Timing Element |
MAXIM - Dallas Semiconductor |
10 |
K4M51163LE-F |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
Samsung Electronic |
11 |
K4M51163LE-L |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
Samsung Electronic |
12 |
K4M51163LE-YC |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
Samsung Electronic |
13 |
K4M51163LE-YF1L |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
Samsung Electronic |
14 |
K4M51163LE-YL |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
Samsung Electronic |
15 |
K4M51163LE-YPF1H |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
Samsung Electronic |
16 |
K4M51163LE-YPF1L |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
Samsung Electronic |
17 |
K4M51163LE-YPL |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
Samsung Electronic |
18 |
K4M51323LE-F1L |
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
Samsung Electronic |
19 |
K4M51323LE-L |
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
Samsung Electronic |
20 |
K4M51323LE-M |
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
Samsung Electronic |
21 |
K4M51323LE-MC |
4M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA |
Samsung Electronic |
22 |
SX3LE-72S-1.27DSA |
1.27mm Pitch SIMM Socket |
Hirose Electric |
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