No. |
Part Name |
Description |
Manufacturer |
1 |
3N150 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
2 |
3N151 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
3 |
3N152 |
Silicon MOS transistor. |
General Electric Solid State |
4 |
3N152 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
5 |
3N152 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
6 |
3N152 |
PWM/VFM Step-down DC/DC Converter |
Ricoh |
7 |
3N153 |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
General Electric Solid State |
8 |
3N153 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
9 |
3N153 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
10 |
3N153 |
N-Channel Insulated-Gate Depletion-type Field-Effect Transistor |
Texas Instruments |
11 |
3N154 |
SILICON MOS TRANSISTOR |
General Electric Solid State |
12 |
3N154 |
N-Channel MOS FET (Field-Effect Transistor) |
Motorola |
13 |
3N154 |
MOS Field-Effect Transistor N-Channel Depletion Type |
RCA Solid State |
14 |
3N155 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
15 |
3N155 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
16 |
3N155 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
17 |
3N155 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
18 |
3N155A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
19 |
3N155A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
20 |
3N155A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
21 |
3N156 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
22 |
3N156 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
23 |
3N156 |
Trans MOSFET N-CH 25V 0.03A |
New Jersey Semiconductor |
24 |
3N156 |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
25 |
3N156A |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor designed for chopper and switching applications |
Motorola |
26 |
3N156A |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
27 |
3N156A |
P-Channel enhancement-type insulated-gate Field-Effect Transistor |
Texas Instruments |
28 |
3N157 |
P-channel silicon nitride passivated MOS field-effect enhancement mode (Type C) transistor |
Motorola |
29 |
3N157 |
P-Channel MOS FET (Field-Effect Transistor) |
Motorola |
30 |
3N157 |
P-channel-enhancement MOSFET amplifier and switching. |
Motorola |
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