| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AT-30533TR1 |
Low Current, High Performance NPN Silicon Bipolar Transistor |
Agilent (Hewlett-Packard) |
| 2 |
AZ100ELT23TR1 |
3.0 V-5.5 V, dual CMOS/TTL to differential PECL translator |
Arizona Microtek |
| 3 |
AZ100LVEL33TR1 |
3.0 V-5.5 V, ECL/PECL 4 driver |
Arizona Microtek |
| 4 |
AZ88923TR1 |
4.5 V, high-speed limiting post amplifier |
Arizona Microtek |
| 5 |
AZ88943TR1 |
4.5 V, high-speed limiting post amplifier |
Arizona Microtek |
| 6 |
IRF6613TR1PBF |
A 40V N-channel HEXFET Power MOSFET with 20 volt gate in the DirectFET MT package rated at 150 amperes. |
International Rectifier |
| 7 |
IRF6623TR1 |
20V Single N-Channel HEXFET Power MOSFET in a DirectFET package |
International Rectifier |
| 8 |
IRF6623TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST package rated at 55 amperes. |
International Rectifier |
| 9 |
IRF6633TR1 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package++rated at 59 amperes. |
International Rectifier |
| 10 |
IRF6633TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package++rated at 59 amperes. |
International Rectifier |
| 11 |
IRF6643TR1PBF |
A 150V Single N-Channel HEXFET Power MOSFET in a DirectFET MZ package rated at 35 amperes optimized with low on resistance. |
International Rectifier |
| 12 |
MGA83563TR1 |
+22 dBm PSAT 3V Power Amplifier for 0.5 6 GHz Applications |
Agilent (Hewlett-Packard) |
| | | |
