| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP100 |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/141.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 179 V @ Ipp = 84 A. |
Panjit International Inc |
| 2 |
15KP100C |
Glass passivated junction transient voltage suppressor. Vrwm = 100 V. Vbr(min/max) = 111/141.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 179 V @ Ipp = 84 A. |
Panjit International Inc |
| 3 |
15KP190 |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. |
Panjit International Inc |
| 4 |
15KP190C |
Glass passivated junction transient voltage suppressor. Vrwm = 190 V. Vbr(min/max) = 209/267.4 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. |
Panjit International Inc |
| 5 |
15KP210A |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. |
Panjit International Inc |
| 6 |
15KP210CA |
Glass passivated junction transient voltage suppressor. Vrwm = 210 V. Vbr(min/max) = 231/296.1 V @ It = 1.0 mA. Ir = 5 uA. Vc = 340 V @ Ipp = 44 A. |
Panjit International Inc |
| 7 |
1N540 |
Diode Switching 400V 3A 2-Pin SOD-64 Ammo |
New Jersey Semiconductor |
| 8 |
1N547 |
Diode Switching 400V 3A 2-Pin SOD-64 Ammo |
New Jersey Semiconductor |
| 9 |
1N6492 |
Hermetic shottky rectifier (4 Amp, 45 Volts) |
Unitrode |
| 10 |
1N914 A |
500mW 100 Volt Silicon Epitaxial Diodes |
Micro Commercial Components |
| 11 |
2K0S-N015 |
Input voltage 200-260 VAC;output voltage 15 VDC;output current:134 A; 2.0 KW enclosed parallel power supply |
FranMar International |
| 12 |
2N3054 |
4 Ampere power transistor 55 Volts 25 Watts |
Motorola |
| 13 |
2N3054A |
4 Ampere power transistor 55 Volts 75 Watts |
Motorola |
| 14 |
2N4898 |
Medium-power PNP silicon power transistor. 4 A, 40 V, 25 W. |
Motorola |
| 15 |
2N4899 |
Medium-power PNP silicon power transistor. 4 A, 60 V, 25 W. |
Motorola |
| 16 |
2N4900 |
Medium-power PNP silicon power transistor. 4 A, 80 V, 25 W. |
Motorola |
| 17 |
2N6049 |
4 AMPERE POWER TRANSISTOR PNP SILICON |
Motorola |
| 18 |
2N6071 |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
| 19 |
2N6071A |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
| 20 |
2N6071B |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
| 21 |
2N6072 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 22 |
2N6072A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 23 |
2N6072B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 300 V. |
Motorola |
| 24 |
2N6073 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 400 V. |
Motorola |
| 25 |
2N6073A |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
| 26 |
2N6073B |
TRIACs 4 AMPERES RMS 200 thru 600 VOLTS |
Motorola |
| 27 |
2N6074 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 28 |
2N6074A |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 29 |
2N6074B |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 500 V. |
Motorola |
| 30 |
2N6075 |
Sensitive gate triac. Silicon bidirectional thyristor. 4 A RMS. Peak repetitive off-state voltage 600 V. |
Motorola |
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