| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N5926 |
1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 2 |
1N5926A |
1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 3 |
1N5926C |
1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 4 |
1N5926D |
1.5 W, silicon zener diode. Zener voltage 11V. Test current 34.1 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 5 |
1N5948 |
1.5 W, silicon zener diode. Zener voltage 91 V. Test current 4.1 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 6 |
1N5948A |
1.5 W, silicon zener diode. Zener voltage 91 V. Test current 4.1 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 7 |
1N5948C |
1.5 W, silicon zener diode. Zener voltage 91 V. Test current 4.1 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 8 |
1N5948D |
1.5 W, silicon zener diode. Zener voltage 91 V. Test current 4.1 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 9 |
AP130-41R |
4.1 V; 300 mA low dropout (LDO) linear regulator |
Anachip |
| 10 |
AP130-41W |
4.1 V; 300 mA low dropout (LDO) linear regulator |
Anachip |
| 11 |
AP130-41Y |
4.1 V; 300 mA low dropout (LDO) linear regulator |
Anachip |
| 12 |
AP130-41YR |
4.1 V; 300 mA low dropout (LDO) linear regulator |
Anachip |
| 13 |
AP130-41Z |
4.1 V; 300 mA low dropout (LDO) linear regulator |
Anachip |
| 14 |
AP130-41ZR |
4.1 V; 300 mA low dropout (LDO) linear regulator |
Anachip |
| 15 |
BQ24079 |
1.2A USB-Friendly Li-Ion Battery Charger and Power-Path Management IC with 4.1 VBAT |
Texas Instruments |
| 16 |
BQ24079RGTR |
1.2A USB-Friendly Li-Ion Battery Charger and Power-Path Management IC with 4.1 VBAT 16-QFN -40 to 85 |
Texas Instruments |
| 17 |
BQ24079RGTT |
1.2A USB-Friendly Li-Ion Battery Charger and Power-Path Management IC with 4.1 VBAT 16-QFN -40 to 85 |
Texas Instruments |
| 18 |
E2502H41 |
2.5 Gbits/s electroabsorption modulated isolated laser module (EM-ILM) for ultralong-reach applications. 600 km, standard fiber. ITU-T wavelength 1544.53 nm. Frequency 194.1 THz. |
Agere Systems |
| 19 |
FDD86540 |
60V, 50 A, 4.1 m? N-Channel PowerTrench� MOSFET |
Fairchild Semiconductor |
| 20 |
LM4040CI4.1 MDC |
Precision Micropower Shunt Voltage Reference |
National Semiconductor |
| 21 |
MMDF3N03HD |
DUAL TMOS POWER MOSFET 4.1 AMPERES 30 VOLTS |
Motorola |
| 22 |
NL10276AC28-01L |
36 cm 14.1 inches, 1024 x 768 pixels, Full-color, Multi-scan function, Built-in CRT interface board |
NEC |
| 23 |
NL10276AC28-02L |
36 cm 14.1 inches, 1024 x 768 pixels, Full-color, Ultra-wide viewing angle, Multi-scan function, CRT interface board |
NEC |
| 24 |
NL10276BC28-05D |
36 cm 14.1 inches, 1024 x 768 pixels, 262,144 colors, LVDS Interface, High luminance |
NEC |
| 25 |
NTHD3101F |
Power MOSFET and Schottky Diode -20 V, FETKY®, P-Channel, -4.4A, w/ 4.1 A Schottky Barrier Diode, ChipFET¿ |
ON Semiconductor |
| 26 |
NTLJD3115P |
Power MOSFET -20 V, -4.1 A, µCool¿ Dual P-Channel, 2x2 mm WDFN Package |
ON Semiconductor |
| 27 |
NTLJF3117P |
Power MOSFET and Schottky Diode, -20 V, -4.1 A, P-Channel |
ON Semiconductor |
| 28 |
PBSS306PZ |
100 V, 4.1 A PNP low VCEsat (BISS) transistor |
Nexperia |
| 29 |
PBSS306PZ |
100 V, 4.1 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
| 30 |
PMN48XP |
20 V, 4.1 A P-channel Trench MOSFET |
Nexperia |
| | | |
