| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1504-90E |
Delay 90 +/-4.5 ns, Fixed dip delay line Td/Tr=5 |
Data Delay Devices Inc |
| 2 |
1513-90Y |
Delay 90 +/-4.5 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 3 |
1514-90Y |
Delay 90 +/-4.5 ns, fixed SIP delay line Td/Tr=5 |
Data Delay Devices Inc |
| 4 |
1515-90A |
Delay 90 +/-4.5 ns, fixed SIP delay line Td/Tr=10 |
Data Delay Devices Inc |
| 5 |
15KP110 |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A. |
Panjit International Inc |
| 6 |
15KP110C |
Glass passivated junction transient voltage suppressor. Vrwm = 110 V. Vbr(min/max) = 122/154.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 196 V @ Ipp = 77 A. |
Panjit International Inc |
| 7 |
1N1320 |
150mW Zener diode 34.5V |
Motorola |
| 8 |
1N1320A |
150mW Zener diode 34.5V |
Motorola |
| 9 |
1N5255A |
28 V, 4.5 mA, zener diode |
Leshan Radio Company |
| 10 |
1N5255C |
28 V, 4.5 mA, zener diode |
Leshan Radio Company |
| 11 |
1N5255D |
28 V, 4.5 mA, zener diode |
Leshan Radio Company |
| 12 |
1N5639 |
Diode TVS Single Uni-Dir 14.5V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 13 |
1N6277 |
Diode TVS Single Uni-Dir 14.5V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 14 |
1S220 |
Silicon junction zener diode 1W 4.5V |
TOSHIBA |
| 15 |
1S262 |
Silicon junction zener diode 10W 4.5V |
TOSHIBA |
| 16 |
1S754H |
Silicon Alloyed Junction, Zener Diode Vz=3.7...4.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 17 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 18 |
274.500 |
MICRO fuse, very fast-acting type. Plug-in. Ampere rating 1/2. Nominal resistance cold 0.167 Ohms. Voltage rating 125. Military QPL type (FM02). |
Littelfuse |
| 19 |
2N3860 |
Chip: 4.5V; geometry 0003; polarity NPN |
Semicoa Semiconductor |
| 20 |
2N5179 |
NPN silicon RF high frequency transistor 4.5dB - 200MHz |
Motorola |
| 21 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 22 |
2N6761 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
| 23 |
2N6762 |
N-Channel Power MOSFETs/ 4.5A/ 450V/500V |
Fairchild Semiconductor |
| 24 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
| 25 |
2N6762 |
MOSPOWER N-Channel Enhancement Mode Transistor 500V 4.5A |
Siliconix |
| 26 |
2SC1358 |
POWER TRANSISTORS(4.5A,1400V,50W) |
MOSPEC Semiconductor |
| 27 |
2SC1875 |
POWER TRANSISTORS(4.5A,1500V,50W) |
MOSPEC Semiconductor |
| 28 |
2SC3459 |
NPN Triple Diffused Planar Silicon Transistor 800V/4.5A Switching Regulator Applications |
SANYO |
| 29 |
2SC4427 |
NPN Triple Diffused Planar Silicon Transistor 800V/4.5A Switching Regulator Applications |
SANYO |
| 30 |
3216CP-4.5A |
3216CP Series Circuit Protector |
COOPER Electronic Technologies |
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