| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FCD900N60Z |
N-Channel SuperFET� II MOSFET 600 V, 4.5 A, 900 m? |
Fairchild Semiconductor |
| 2 |
IRF430 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 3 |
IRF430-433 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 4 |
IRF431 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 5 |
IRF432 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 6 |
IRF433 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 7 |
IRF831 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 8 |
IRF832 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 9 |
IRF833 |
N-Channel Power MOSFETs/ 4.5 A/ 450V/500V |
Fairchild Semiconductor |
| 10 |
MTP4N45 |
N-Channel Power MOSFETs, 4.5 A, 450V/500V |
Fairchild Semiconductor |
| 11 |
MTP4N50 |
N-Channel Power MOSFETs, 4.5 A, 450V/500V |
Fairchild Semiconductor |
| 12 |
MVS5000 |
Mashine vision strobe. Input voltage 11-15 VDC, input current 4.5 amps at 12 V (30Hz), flashlamp voltage 600 volts +-3%, discharge power 43 watts(max). |
PerkinElmer Optoelectronics |
| 13 |
NTHD5904N |
Power MOSET 20 V, 4.5 A, Dual N-Channel ChipFET™ |
ON Semiconductor |
| 14 |
NTMS4700N |
Power MOSFET 30 V, 14.5 A, Single N-Channel, SO-8 |
ON Semiconductor |
| 15 |
NTMS4P01R2 |
Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package |
ON Semiconductor |
| 16 |
NTMS4P01R2-D |
Power MOSFET -4.5 Amps, -12 Volts P-Channel Enhancement-Mode Single SO-8 Package |
ON Semiconductor |
| 17 |
PBSS304PZ |
60 V, 4.5 A PNP low V_CEsat (BISS) transistor |
Nexperia |
| 18 |
PBSS304PZ |
60 V, 4.5 A PNP low V_CEsat (BISS) transistor |
NXP Semiconductors |
| 19 |
PBSS305PZ |
80 V, 4.5 A PNP low V_CEsat (BISS) transistor |
Nexperia |
| 20 |
PBSS305PZ |
80 V, 4.5 A PNP low V_CEsat (BISS) transistor |
NXP Semiconductors |
| 21 |
PBSS306NX |
100 V, 4.5 A NPN low VCEsat (BISS) transistor |
Nexperia |
| 22 |
PBSS306NX |
100 V, 4.5 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
| 23 |
PMEG6045ETP |
High-temperature 60 V, 4.5 A Schottky barrier rectifier |
Nexperia |
| 24 |
PMEG6045ETP |
High-temperature 60 V, 4.5 A Schottky barrier rectifier |
NXP Semiconductors |
| 25 |
STB6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in D2PAK package |
ST Microelectronics |
| 26 |
STB6N80K5 |
N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in D2PAK package |
ST Microelectronics |
| 27 |
STD6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in DPAK package |
ST Microelectronics |
| 28 |
STD6N80K5 |
N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package |
ST Microelectronics |
| 29 |
STF6N60M2 |
N-channel 600 V, 1.06 Ohm typ., 4.5 A MDmesh II Plus(TM) low Qg Power MOSFET in TO-220FP package |
ST Microelectronics |
| 30 |
STF6N80K5 |
N-channel 800 V, 1.3 Ohm typ., 4.5 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package |
ST Microelectronics |
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