| No. |
Part Name |
Description |
Manufacturer |
| 1 |
3502 |
200 V three phase bridge 40-60 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 2 |
3502F |
200 V three phase bridge 40-60 A forward current,150 ns recovery time |
Voltage Multipliers |
| 3 |
3502UF |
200 V three phase bridge 40-60 A forward current,70 ns recovery time |
Voltage Multipliers |
| 4 |
3506 |
600 V three phase bridge 40-60 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 5 |
3506F |
600 V three phase bridge 40-60 A forward current,150 ns recovery time |
Voltage Multipliers |
| 6 |
3506UF |
600 V three phase bridge 40-60 A forward current,70 ns recovery time |
Voltage Multipliers |
| 7 |
3510 |
1000 V three phase bridge 40-60 A forward current, 3000 ns recovery time |
Voltage Multipliers |
| 8 |
3510F |
1000 V three phase bridge 40-60 A forward current,150 ns recovery time |
Voltage Multipliers |
| 9 |
3510UF |
1000 V three phase bridge 40-60 A forward current,70 ns recovery time |
Voltage Multipliers |
| 10 |
AMR440-60 |
Linear Power Amplifier 60W, 400-440MHz, 28Vcc, Class AB |
Motorola |
| 11 |
BC140-6 |
Silicon NPN Epitaxial Planar AF Transistor |
AEG-TELEFUNKEN |
| 12 |
BC140-6 |
General purpose NPN transistor |
FERRANTI |
| 13 |
BC140-6 |
Silicon NPN Epitaxial Transistor (in german) |
ITT Semiconductors |
| 14 |
BC140-6 |
NPN medium power transistor |
National Semiconductor |
| 15 |
BC140-6 |
Trans GP BJT NPN 40V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
| 16 |
BC140-6 |
Silicon Planar NPN transistor |
SGS-ATES |
| 17 |
BC140-6 |
NPN Silicon Transistor for AF amplifiers and switching applications up to 1A |
Siemens |
| 18 |
BC140-6 |
NPN SILICON TRANSISTORS |
Siemens |
| 19 |
BC340-6 |
Silicon NPN Epitaxial-Planar Transistor (in german) |
ITT Semiconductors |
| 20 |
BD139-6 |
12.500W Switching NPN Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - 100 hFE. Complementary BD140-6 |
Continental Device India Limited |
| 21 |
BD140-6 |
12.500W Switching PNP Plastic Leaded Transistor. 80V Vceo, 1.500A Ic, 40 - 100 hFE. Complementary BD139-6 |
Continental Device India Limited |
| 22 |
BD140-6 |
PNP High-speed, medium power, general purpose transistor, plastic case |
IPRS Baneasa |
| 23 |
BD140-6 |
TO-126 Plastic-Encapsulate Biploar Transistors |
Micro Commercial Components |
| 24 |
BD140-6 |
1.5A plastic 10W medium power silicon PNP transistor |
Motorola |
| 25 |
BD140-6 |
PNP Silicon Transistor for AF driver and power stages of medium output |
Siemens |
| 26 |
BD140-6 |
PNP SILICON TRANSISTORS |
Siemens |
| 27 |
BD440-6 |
PNP medium power, general purpose transistor - plastic case |
IPRS Baneasa |
| 28 |
BSW40-6 |
Silicon PNP Epitaxial Planar Switching Transistor |
AEG-TELEFUNKEN |
| 29 |
BTA140-600 |
4Q Triac |
NXP Semiconductors |
| 30 |
BTA140-600 |
Triacs |
Philips |
| | | |
