No. |
Part Name |
Description |
Manufacturer |
1 |
2722 162 01931 |
CIRCULATORS 225 TO 400MHZ |
Philips |
2 |
2722 162 01941 |
CIRCULATORS 225 TO 400MHZ |
Philips |
3 |
2722 162 01951 |
CIRCULATORS 225 TO 400MHZ |
Philips |
4 |
2722 162 03421 |
CIRCULATORS 225 TO 400MHZ |
Philips |
5 |
2722 162 05091 |
CIRCULATORS 225 TO 400MHZ |
Philips |
6 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
7 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
8 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
9 |
2N3866 |
NPN silicon high frequency transistor 1.0W - 400MHz |
Motorola |
10 |
2N3866A |
NPN silicon high frequency transistor 1.0W - 400MHz |
Motorola |
11 |
2N3948 |
NPN silicon high frequency transistor 1.0W - 400MHz |
Motorola |
12 |
2N3961 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
13 |
2N5016 |
NPN silicon RF Power Transistor 15W 400MHz |
Motorola |
14 |
2N5090 |
NPN silicon RF Power Transistor, 1.2W Output Minimum at 400MHz (7.8 dB Gain) |
Motorola |
15 |
2N6104 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
16 |
2N6104 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
17 |
2N6105 |
Characteristics and Broadband (225-to-400MHz) Applications of the RCA-2N6104 and 2N6105 UHF Power Transistors - App. Note |
RCA Solid State |
18 |
2N6105 |
30W 400MHz Broadband Emitter-Ballasted Silicon NPN Overlay Transistor |
RCA Solid State |
19 |
2N6439 |
Application Note - A 60W 225-400MHz amplifier |
Motorola |
20 |
2N6439 |
Controlled Q broadband NPN silicon RF power transistor 60W - 225-400MHz |
Motorola |
21 |
2N6985 |
125W 30 to 400MHz controlled Q broadband push-pull RF Power Transistor NPN silicon |
Motorola |
22 |
2SC1120 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
23 |
2SC1121 |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio RF power amplifier applications (low supply voltage use) |
TOSHIBA |
24 |
2SC1122A |
Silicon NPN epitaxial planar transistor 400MHz Land-Mobil Radio Output Stage applications (low supply voltage use) |
TOSHIBA |
25 |
2SC1241 |
Silicon NPN epitaxial planar RF transistor, fT=400MHz |
TOSHIBA |
26 |
2SC752G |
Silicon NPN epitaxial planar transistor, ultra high speed switching, computer, countor applications fT=400MHz |
TOSHIBA |
27 |
40673 |
Silicon Dual Insulated-Gate Field-Effect N-Channel Transistor, up to 400MHz |
RCA Solid State |
28 |
40940 |
5W, 400MHz Silicon NPN Overlay Transistor for VHF/UHF High-Power Amplifiers, Warning - device contains beryllium oxide |
RCA Solid State |
29 |
AB-188 |
BUILDING A 400MHz WIDE-BAND DIFFERENTIAL AMPLIFIER: IT'S A BREEZE WITH THE DIAMOND TRANSISTOR OPA660. |
Burr Brown |
30 |
AD8344 |
400MHz to 1.2GHz Active Receive Mixer |
Analog Devices |
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