No. |
Part Name |
Description |
Manufacturer |
1 |
84032013A |
Dual 4-Bit D-type Latches With 3-State Outputs |
Texas Instruments |
2 |
8403201KA |
Dual 4-Bit D-type Latches With 3-State Outputs |
Texas Instruments |
3 |
8403201LA |
Dual 4-Bit D-type Latches With 3-State Outputs |
Texas Instruments |
4 |
CGHV40320D |
320W, 4.0 GHz, GaN HEMT Die |
Wolfspeed |
5 |
D8740320GT |
40 - 870 MHz, 32 dB GaAs Power Doubler Hybrid Amplifier |
Qorvo |
6 |
D8740320GTH |
40 - 870 MHz, 32 dB GaAs Power Doubler Hybrid Amplifier |
Qorvo |
7 |
K7A403200B |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
8 |
K7A403200B-QC |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
9 |
K7A403200M |
128K x 32-Bit Synchronous Pipelined Burst SRAM Rev. 5.0 (DEC. 1999) |
Samsung Electronic |
10 |
K7A403201B |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
11 |
K7A403201B-QC |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
12 |
K7A403209B |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
13 |
K7A403209B-QC |
128Kx36/x32 & 256Kx18 Synchronous SRAM |
Samsung Electronic |
14 |
K7A403601B K7A403201B |
128Kx36 & 128Kx32-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
15 |
K7A403609B K7A403209B K7A401809B |
128Kx36 & 128Kx32 & 256Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet |
Samsung Electronic |
16 |
K7N403601B K7N403201B K7N401801B |
128Kx36 & 128Kx32 & 256Kx18-Bit Pipelined NtRAM� Data Sheet |
Samsung Electronic |
17 |
K7N403609B K7N403209B K7N401809B |
128Kx36 & 128Kx32 & 256Kx18-Bit Pipelined NtRAM� Data Sheet |
Samsung Electronic |
18 |
OS10040320PW |
40 - 1000 MHz GaAs Hybrid Optical Receiver Amplifier |
Qorvo |
19 |
SK840320 |
MOSFETs for DC-DC Converter |
Panasonic |
20 |
SK8403200L |
MOSFETs for Lithium-ion Battery Protection |
Panasonic |
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