| No. |
Part Name |
Description |
Manufacturer |
| 1 |
MAX4174BHEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 40, 1+ (Rf/Dg) noninverting gain 41, -3dB BW 390kHz. |
MAXIM - Dallas Semiconductor |
| 2 |
MAX4175BHEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 40, 1+ (Rf/Dg) noninverting gain 41, -3dB BW 390kHz. |
MAXIM - Dallas Semiconductor |
| 3 |
MAX4274BHESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 40, 1+ (Rf/Dg) noninverting gain 41, -3dB BW 390kHz. |
MAXIM - Dallas Semiconductor |
| 4 |
MAX4274BHEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 40, 1+ (Rf/Dg) noninverting gain 41, -3dB BW 390kHz. |
MAXIM - Dallas Semiconductor |
| 5 |
MAX4275BHESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 40, 1+ (Rf/Dg) noninverting gain 41, -3dB BW 390kHz. |
MAXIM - Dallas Semiconductor |
| 6 |
MAX4275BHEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 40, 1+ (Rf/Dg) noninverting gain 41, -3dB BW 390kHz. |
MAXIM - Dallas Semiconductor |
| 7 |
MAX544XEVKIT |
Evaluation Kit for the MAX5441, MAX5442, MAX5443, and MAX5444 |
MAXIM - Dallas Semiconductor |
| 8 |
MAX544XEVKIT# |
Evaluation Kit for the MAX5441, MAX5442, MAX5443, and MAX5444 |
MAXIM - Dallas Semiconductor |
| 9 |
MCR649-1 |
Industrial-type, silicon controlled rectifier in a "diamond" package TO-41, 25V |
Motorola |
| 10 |
MCR649-2 |
Industrial-type, silicon controlled rectifier in a "diamond" package TO-41, 50V |
Motorola |
| 11 |
MCR649-3 |
Industrial-type, silicon controlled rectifier in a "diamond" package TO-41, 100V |
Motorola |
| 12 |
MCR649-4 |
Industrial-type, silicon controlled rectifier in a "diamond" package TO-41, 200V |
Motorola |
| 13 |
MCR649-5 |
Industrial-type, silicon controlled rectifier in a "diamond" package TO-41, 300V |
Motorola |
| 14 |
MCR649-6 |
Industrial-type, silicon controlled rectifier in a "diamond" package TO-41, 400V |
Motorola |
| 15 |
MCR649-7 |
Industrial-type, silicon controlled rectifier in a "diamond" package TO-41, 500V |
Motorola |
| 16 |
MH16D64AKQC-10 |
1,073,741,824-BIT (16,777,216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 17 |
MH16D64AKQC-75 |
1,073,741,824-BIT (16,777,216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module |
Mitsubishi Electric Corporation |
| 18 |
MH16S64APFC-7 |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 19 |
MH16S64APFC-7L |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 20 |
MH16S64APFC-8 |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 21 |
MH16S64APFC-8L |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 22 |
MH16S64APHB-6 |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| 23 |
MH16S64APHB-7 |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| 24 |
MH16S64APHB-8 |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| 25 |
MH16S64BAMD-6 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 26 |
MH16S64PHB-6 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 27 |
OPA241, OPA251 |
Single-Supply, MicroPOWER OPERATIONAL AMPLIFIERS |
Burr Brown |
| 28 |
SF245 |
Si-npn RF transistor, possibly equivalent BF199, BF241, BF311 |
RFT |
| 29 |
U131G |
Circuit for 32kHz LCD alarm clock, cal. 63 and RSU, cal. 41, possibly equivalent TC8208AF-AS |
RFT |
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