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Datasheets for 41,

Datasheets found :: 31
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No. Part Name Description Manufacturer
1 2SC3141 CLASS A, 860MHz 24V power transistor (This datasheet of NEL080525-28 is also the datasheet of 2SC3141, see the Electrical Characteristics table) NEC
2 2SC3541 Class A, 1.3 GHz 12V power transistor (This datasheet of NEL130681-12 is also the datasheet of 2SC3541, see the Electrical Characteristics table) NEC
3 MAX4174BHEUK-T Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 40, 1+ (Rf/Dg) noninverting gain 41, -3dB BW 390kHz. MAXIM - Dallas Semiconductor
4 MAX4175BHEUK-T Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 40, 1+ (Rf/Dg) noninverting gain 41, -3dB BW 390kHz. MAXIM - Dallas Semiconductor
5 MAX4274BHESA Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 40, 1+ (Rf/Dg) noninverting gain 41, -3dB BW 390kHz. MAXIM - Dallas Semiconductor
6 MAX4274BHEUA Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 40, 1+ (Rf/Dg) noninverting gain 41, -3dB BW 390kHz. MAXIM - Dallas Semiconductor
7 MAX4275BHESA Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 40, 1+ (Rf/Dg) noninverting gain 41, -3dB BW 390kHz. MAXIM - Dallas Semiconductor
8 MAX4275BHEUA Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 40, 1+ (Rf/Dg) noninverting gain 41, -3dB BW 390kHz. MAXIM - Dallas Semiconductor
9 MAX544XEVKIT Evaluation Kit for the MAX5441, MAX5442, MAX5443, and MAX5444 MAXIM - Dallas Semiconductor
10 MAX544XEVKIT# Evaluation Kit for the MAX5441, MAX5442, MAX5443, and MAX5444 MAXIM - Dallas Semiconductor
11 MCR649-1 Industrial-type, silicon controlled rectifier in a "diamond" package TO-41, 25V Motorola
12 MCR649-2 Industrial-type, silicon controlled rectifier in a "diamond" package TO-41, 50V Motorola
13 MCR649-3 Industrial-type, silicon controlled rectifier in a "diamond" package TO-41, 100V Motorola
14 MCR649-4 Industrial-type, silicon controlled rectifier in a "diamond" package TO-41, 200V Motorola
15 MCR649-5 Industrial-type, silicon controlled rectifier in a "diamond" package TO-41, 300V Motorola
16 MCR649-6 Industrial-type, silicon controlled rectifier in a "diamond" package TO-41, 400V Motorola
17 MCR649-7 Industrial-type, silicon controlled rectifier in a "diamond" package TO-41, 500V Motorola
18 MH16D64AKQC-10 1,073,741,824-BIT (16,777,216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module Mitsubishi Electric Corporation
19 MH16D64AKQC-75 1,073,741,824-BIT (16,777,216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module Mitsubishi Electric Corporation
20 MH16S64APFC-7 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM Mitsubishi Electric Corporation
21 MH16S64APFC-7L 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM Mitsubishi Electric Corporation
22 MH16S64APFC-8 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM Mitsubishi Electric Corporation
23 MH16S64APFC-8L 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM Mitsubishi Electric Corporation
24 MH16S64APHB-6 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM Mitsubishi Electric Corporation
25 MH16S64APHB-7 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM Mitsubishi Electric Corporation
26 MH16S64APHB-8 1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM Mitsubishi Electric Corporation
27 MH16S64BAMD-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Mitsubishi Electric Corporation
28 MH16S64PHB-6 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM Mitsubishi Electric Corporation
29 OPA241, OPA251 Single-Supply, MicroPOWER OPERATIONAL AMPLIFIERS Burr Brown
30 SF245 Si-npn RF transistor, possibly equivalent BF199, BF241, BF311 RFT


Datasheets found :: 31
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