No. |
Part Name |
Description |
Manufacturer |
1 |
HEC4104BDB |
Quadruple low-to-high voltage translator with 3-state outputs |
Philips |
2 |
HEF4104B |
Quadruple low to high voltage translator with 3-state outputs |
Philips |
3 |
HEF4104BD |
Quadruple low to high voltage translator with 3-state outputs |
Philips |
4 |
HEF4104BDB |
Quadruple low-to-high voltage translator with 3-state outputs |
Philips |
5 |
HEF4104BF |
Quadruple low to high voltage translator with 3-state outputs |
Philips |
6 |
HEF4104BN |
Quadruple low to high voltage translator with 3-state outputs |
Philips |
7 |
HEF4104BP |
Quadruple low to high voltage translator with 3-state outputs |
Philips |
8 |
HEF4104BPB |
Quadruple low-to-high voltage translator with 3-state outputs |
Philips |
9 |
HEF4104BT |
Quad low-to-high voltage translator with 3-state outputs |
Nexperia |
10 |
HEF4104BT |
Quadruple low to high voltage translator with 3-state outputs |
Philips |
11 |
HEF4104BT-Q100 |
Quad low-to-high voltage translator with 3-state outputs |
Nexperia |
12 |
HEF4104BT-Q100 |
Quad low-to-high voltage translator with 3-state outputs |
NXP Semiconductors |
13 |
HEF4104BU |
Quadruple low-to-high voltage translator with 3-state outputs |
Philips |
14 |
JM38510/34104B2A |
Quad D Flip-Flop |
National Semiconductor |
15 |
JM38510/34104B2A |
Quad D Flip-Flop |
National Semiconductor |
16 |
JM38510/34104BEA |
Quad D Flip-Flop |
National Semiconductor |
17 |
JM38510/34104BEA |
Quad D Flip-Flop |
National Semiconductor |
18 |
JM38510/34104BFA |
Quad D Flip-Flop |
National Semiconductor |
19 |
JM38510/34104BFA |
Quad D Flip-Flop |
National Semiconductor |
20 |
JM38510_34104B2 |
Quad D Flip-Flop |
National Semiconductor |
21 |
JM38510_34104BE |
Quad D Flip-Flop |
National Semiconductor |
22 |
JM38510_34104BF |
Quad D Flip-Flop |
National Semiconductor |
23 |
KM416V4104B |
4M x 16bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
24 |
KM416V4104BS-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns |
Samsung Electronic |
25 |
KM416V4104BS-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns |
Samsung Electronic |
26 |
KM416V4104BS-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns |
Samsung Electronic |
27 |
KM416V4104BSL-45 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power |
Samsung Electronic |
28 |
KM416V4104BSL-5 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power |
Samsung Electronic |
29 |
KM416V4104BSL-6 |
4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power |
Samsung Electronic |
30 |
KM44V4104BK |
V(cc): -0.5 to +4.6V; 1W; 50mA; 4M x 4-bit CMOS dynamic RAM with extended data out |
Samsung Electronic |
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