| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4105C |
500mW low noise silicon zener diode. Nominal zener voltage 11V. 2% tolerance. |
Jinan Gude Electronic Device |
| 2 |
1N4105C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 3 |
1N4105C-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 4 |
1N4105CUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 5 |
1N4105CUR-1E3 |
Zener Voltage Regulator Diode |
Microsemi |
| 6 |
1PMT4105C/TR13 |
Zener Voltage Regulator Diode |
Microsemi |
| 7 |
1PMT4105C/TR7 |
Zener Voltage Regulator Diode |
Microsemi |
| 8 |
1PMT4105Ce3/TR13 |
Zener Voltage Regulator Diode |
Microsemi |
| 9 |
1PMT4105Ce3/TR7 |
Zener Voltage Regulator Diode |
Microsemi |
| 10 |
JAN1N4105C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 11 |
JAN1N4105CUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 12 |
JANS1N4105C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 13 |
JANS1N4105CUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 14 |
JANTX1N4105C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 15 |
JANTX1N4105CUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 16 |
JANTXV1N4105C-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 17 |
JANTXV1N4105CUR-1 |
Zener Voltage Regulator Diode |
Microsemi |
| 18 |
KM44C4105C |
4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out |
Samsung Electronic |
| 19 |
KM44C4105CK-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 20 |
KM44C4105CK-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 21 |
KM44C4105CKL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 22 |
KM44C4105CKL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 23 |
KM44C4105CS-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 24 |
KM44C4105CS-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 25 |
KM44C4105CSL-5 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 50ns |
Samsung Electronic |
| 26 |
KM44C4105CSL-6 |
4M x 4bit CMOS quad CAS DRAM with extended data out, 60ns |
Samsung Electronic |
| 27 |
LH4105CG |
100 mA, 2.5 W, +/-18 V, fast setting high current operational amplifier |
National Semiconductor |
| 28 |
NTJD4105C |
Small Signal MOSFET 20V/-8V, Complimentary +0.63A/-0.775A SC-88 |
ON Semiconductor |
| 29 |
NTJD4105CT1 |
Small Signal MOSFET 20V/-8V, Complimentary +0.63A/-0.775A SC-88 |
ON Semiconductor |
| 30 |
NTJD4105CT1G |
Small Signal MOSFET 20V/-8V, Complimentary +0.63A/-0.775A SC-88 |
ON Semiconductor |
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