| No. |
Part Name |
Description |
Manufacturer |
| 1 |
D2412D-R |
12A Fast-Recovery Silicon Rectifier 400V, reverse polarity |
RCA Solid State |
| 2 |
K4E160412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 3 |
K4E160412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 4 |
K4E170412D-B |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 5 |
K4E170412D-F |
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 6 |
K4E640412D-JC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 7 |
K4E640412D-TC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 8 |
K4E660412D-JC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 9 |
K4E660412D-TC_L |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 10 |
K4F160412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 11 |
K4F160412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle. |
Samsung Electronic |
| 12 |
K4F170412D-B |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 13 |
K4F170412D-F |
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 14 |
K4F640412D-JC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 15 |
K4F640412D-TC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 4K refresh cycle. |
Samsung Electronic |
| 16 |
K4F660412D-JC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 17 |
K4F660412D-TC_L |
16M x 4 bit CMOS dynamic RAM with fast page mode. 3.3V, 8K refresh cycle. |
Samsung Electronic |
| 18 |
R1210N412D-TL |
PWM step-up DC/DC converter. Output voltage 4.1V. External tr. driver. Oscillator frequency 180kHz. Taping specification TL |
Ricoh |
| 19 |
R1210N412D-TR |
PWM step-up DC/DC converter. Output voltage 4.1V. External tr. driver. Oscillator frequency 180kHz. Standard taping specification TR |
Ricoh |
| 20 |
R1223N412D-TL |
Step-down DC/DC converter with low supply current by CMOS. Output voltage 4.1V. Oscillator frequency 500kHz. Taping specification TL |
Ricoh |
| 21 |
R1223N412D-TR |
Step-down DC/DC converter with low supply current by CMOS. Output voltage 4.1V. Oscillator frequency 500kHz. Standard taping specification TR |
Ricoh |
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