| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N414A |
Germanium PNP Transistor |
Motorola |
| 2 |
2N4414A |
Silicon PNP Transistor |
Motorola |
| 3 |
AON6414A |
Single LV MOSFETs (12V - 30V) |
Alpha & Omega Semiconductor |
| 4 |
AQV414A |
HIGH VOLTAGE, PHOTO MOS RELAY |
Global Components & Controls |
| 5 |
AQV414A |
PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. I/O isolation: 1.500 V AC. Output rating: load voltage 400 V, load current 120 mA. Surface-mount terminal, tube packing style. |
Matsushita Electric Works(Nais) |
| 6 |
AQV414AX |
PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. I/O isolation: 1.500 V AC. Output rating: load voltage 400 V, load current 120 mA. Surface-mount terminal, tape and reel packing style, picked from the 1/2/3-pin |
Matsushita Electric Works(Nais) |
| 7 |
AQV414AZ |
PhotoMOS relay, GU (general use) type [1-channel (form B) type]. AC/DC type. I/O isolation: 1.500 V AC. Output rating: load voltage 400 V, load current 120 mA. Surface-mount terminal, tape and reel packing style, picked from the 4/5/6-pin |
Matsushita Electric Works(Nais) |
| 8 |
AQW414A |
High voltage, photo MOS relay, isolation 3750V |
Global Components & Controls |
| 9 |
AQW414A |
PhotoMOS relay, GU (general use) type, [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Surface-mount terminal, tube packing style. |
Matsushita Electric Works(Nais) |
| 10 |
AQW414AX |
PhotoMOS relay, GU (general use) type, [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Surface-mount terminal, tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 11 |
AQW414AZ |
PhotoMOS relay, GU (general use) type, [2-channel (form B) type]. AC/DC type. Output rating: load voltage 400 V, load current 100 mA. Surface-mount terminal, tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 12 |
BC414A |
Low-power general purpose NPN transistor - plastic case |
IPRS Baneasa |
| 13 |
BC414A |
Silicon NPN Epitaxial Planar Low Noise AF Transistor |
IPRS Baneasa |
| 14 |
CLC414A8B |
Quad/ Low-Power Monolithic Op Amp |
National Semiconductor |
| 15 |
CLC414A8D |
Quad, Low-Power Monolithic Op Amp |
Comlinear Corporation |
| 16 |
CLC414AE-MIL |
Quad, Low Power Monolithic Op Amp [Preliminary] |
National Semiconductor |
| 17 |
CLC414AID |
Quad, Low-Power Monolithic Op Amp |
Comlinear Corporation |
| 18 |
CLC414AJE |
Quad, Low-Power Monolithic Op Amp |
Comlinear Corporation |
| 19 |
CLC414AJE |
Quad/ Low-Power Monolithic Op Amp |
National Semiconductor |
| 20 |
CLC414AJE-TR13 |
Quad, Low-Power Monolithic Op Amp |
National Semiconductor |
| 21 |
CLC414AJP |
Quad, Low-Power Monolithic Op Amp |
Comlinear Corporation |
| 22 |
CLC414AJP |
Quad/ Low-Power Monolithic Op Amp |
National Semiconductor |
| 23 |
CLC414ALC |
Quad, Low-Power Monolithic Op Amp |
Comlinear Corporation |
| 24 |
CLC414ALC |
Quad/ Low-Power Monolithic Op Amp |
National Semiconductor |
| 25 |
CLC414AMC |
Quad, Low-Power Monolithic Op Amp |
Comlinear Corporation |
| 26 |
CNZ1414A |
Integrated Photosensor |
Panasonic |
| 27 |
CY7C1414AV18 |
36-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture |
Cypress |
| 28 |
CY7C1414AV18-167BZXC |
36-Mbit QDR-II(TM) SRAM 2-Word Burst Architecture |
Cypress |
| 29 |
ICX414AL |
Diagonal 8mm(Type 1/2) Progressive Scan CCD |
SONY |
| 30 |
ICX414AQ |
Diagonal 8mm(Type 1/2) Progressive Scan CCD |
SONY |
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