| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4160B |
Zener Diode 8.2V 1W |
Motorola |
| 2 |
1N4160B |
Diode Zener 18V 5% 1W 2-Pin DO-29 |
New Jersey Semiconductor |
| 3 |
1N4160B |
ZENER DIODES |
Unknow |
| 4 |
AD14160BB-4 |
Quad-SHARC DSP Multiprocessor Family |
Analog Devices |
| 5 |
G34160B1EB1 |
Single Phase Bridge |
Microsemi |
| 6 |
G504160B1EB1 |
Single Phase Bridge |
Microsemi |
| 7 |
HD14160B |
Decade / 4-Bit binary Counters with Clear |
Hitachi Semiconductor |
| 8 |
HYB39S64160BT-7 |
64M SDRAM Component |
Infineon |
| 9 |
HYB39S64160BT-7,5 |
64M SDRAM Component |
Infineon |
| 10 |
HYB39S64160BT-7.5 |
64-MBit Synchronous DRAM |
Infineon |
| 11 |
HYB39S64160BT-8 |
64M SDRAM Component |
Infineon |
| 12 |
K34160B1EB1 |
Single Phase Bridge |
Microsemi |
| 13 |
N504160B1EB1 |
Single Phase Bridge |
Microsemi |
| 14 |
N74160B |
Synchronous 4-BIT decade counter |
Signetics |
| 15 |
S54160B |
Synchronous 4-BIT decade counter |
Signetics |
| 16 |
STG4160BJR |
Low voltage 0.5 Ohm single SPDT switch with break-before-make feature and 15 kV ESD protection |
ST Microelectronics |
| 17 |
T224160B |
256K x 16 DYNAMIC RAM FAST PAGE MODE |
Taiwan Memory Technology |
| 18 |
T224160B |
4.5 to 5.5V; 1.2W; 256K x 16 dynamic RAM: fast page mode |
TM Technology |
| 19 |
T224160B-30 |
256K x 16 DYNAMIC RAM FAST PAGE MODE |
Taiwan Memory Technology |
| 20 |
T224160B-35 |
256K x 16 DYNAMIC RAM FAST PAGE MODE |
Taiwan Memory Technology |
| 21 |
T224160B-45 |
256K x 16 DYNAMIC RAM FAST PAGE MODE |
Taiwan Memory Technology |
| 22 |
T224160B-60 |
256K x 16 DYNAMIC RAM FAST PAGE MODE |
Taiwan Memory Technology |
| 23 |
X34160B1B1 |
Single Phase Bridge |
Microsemi |
| 24 |
X34160B1B1-S |
Single Phase Bridge |
Microsemi |
| 25 |
X34160B1N1 |
Single Phase Bridge |
Microsemi |
| 26 |
X34160B1N1-S |
Single Phase Bridge |
Microsemi |
| | | |
