No. |
Part Name |
Description |
Manufacturer |
1 |
2N5416S |
PNP Transistor |
Microsemi |
2 |
2N5416S |
Trans GP BJT PNP 300V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
3 |
2N5416SB |
Trans GP BJT PNP 300V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
4 |
2N5416SGGGJ |
Trans GP BJT PNP 300V 1A 3-Pin TO-39 |
New Jersey Semiconductor |
5 |
2SC3416S |
Chroma Amplifier Transistor(300V,0.1A) |
ROHM |
6 |
2SK416S |
Silicon N-Channel MOS FET |
Hitachi Semiconductor |
7 |
2SK416S |
HIGH SPPED POWER SWITCHING Complementary pair with 2SJ120L,2SJ120S |
Hitachi Semiconductor |
8 |
DF22-1416SC |
7.92 mm Contact Pitch, High-Current Connectors for Internal Power Supplies (UL, C-UL and TUV Listed) |
Hirose Electric |
9 |
DF22-1416SCF |
7.92 mm Contact Pitch, High-Current Connectors for Internal Power Supplies (UL, C-UL and TUV Listed) |
Hirose Electric |
10 |
DF22A-1416SC |
7.92 mm Contact Pitch, High-Current Connectors for Internal Power Supplies (UL, C-UL and TUV Listed) |
Hirose Electric |
11 |
DF22A-1416SCF |
7.92 mm Contact Pitch, High-Current Connectors for Internal Power Supplies (UL, C-UL and TUV Listed) |
Hirose Electric |
12 |
HN58X2416SFPIE |
Memory>EEPROM>Serial EEPROM |
Renesas |
13 |
HN58X2416STIE |
Memory>EEPROM>Serial EEPROM |
Renesas |
14 |
IDT71V416S12Y |
3.3V CMOS STATIC RAM 4 MEG (256K x 16-BIT) |
IDT |
15 |
IDT71V416S15Y |
3.3V CMOS STATIC RAM 4 MEG (256K x 16-BIT) |
IDT |
16 |
IDT71V416S20Y |
3.3V CMOS STATIC RAM 4 MEG (256K x 16-BIT) |
IDT |
17 |
ISD1416S |
Single-Chip Voice Record/Playback Devices 16-and 20-Second Durations |
etc |
18 |
ISD1416S |
Single-chip voice record/playback device with 16 seconds duration |
Information Storage Devices |
19 |
ISD1416SI |
Single-Chip Voice Record/Playback Devices 16-and 20-Second Durations |
etc |
20 |
ISD1416SI |
Single-chip voice record/playback device with 16 seconds duration |
Information Storage Devices |
21 |
JAN2N5416S |
PNP Transistor |
Microsemi |
22 |
JANS2N5416S |
PNP Transistor |
Microsemi |
23 |
JANTX2N5416S |
PNP Transistor |
Microsemi |
24 |
JANTXV2N5416S |
PNP Transistor |
Microsemi |
25 |
KM416S1120D |
512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
etc |
26 |
KM416S1120DT-G/F10 |
512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
etc |
27 |
KM416S1120DT-G/F7 |
512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
etc |
28 |
KM416S1120DT-G/F8 |
512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
etc |
29 |
KM416S1120DT-G/FC |
512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
etc |
30 |
KM416S4030C |
1M x 16Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
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