| No. |
Part Name |
Description |
Manufacturer |
| 1 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 2 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 3 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 4 |
AT49BV6416T-70TI |
64-megabit (4M x 16) Page Mode 2.7-volt Flash Memory |
Atmel |
| 5 |
AT49SN6416T-70CI |
64-megabit (4M x 16) Burst/Page Mode 1.8-volt Flash Memory |
Atmel |
| 6 |
MCP1416T-E/OT |
Power Management- Power MOSFET Drivers |
Microchip |
| 7 |
MCP1416T-E/OTVAO |
Power Management- Power MOSFET Drivers |
Microchip |
| 8 |
SM32C6416T-EP |
Enhanced Product Fixed-Point Digital Signal Processor |
Texas Instruments |
| | | |
