| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1417-12A |
12 W, 28 V, 1400-1700 MHz common base transistor |
GHz Technology |
| 2 |
1417-6A |
6 W, 28 V, 1400-1700 MHz common base transistor |
GHz Technology |
| 3 |
2089-6417-00 |
800-900 MHz, Power divider, 2,3.4.6.8-way |
MA-Com |
| 4 |
ADA4417-3 |
Integrated Triple Video Filter for High Definition Video |
Analog Devices |
| 5 |
ARX4417-FP |
ARX 4418 & 4417 Variable Amplitude Transceivers for MACAIR A3818, A5690, A5232, A4905 & MIL-STD-1553 |
Aeroflex Circuit Technology |
| 6 |
ARX4417-LPFP |
ARX 4418 & 4417 Variable Amplitude Transceivers for MACAIR A3818, A5690, A5232, A4905 & MIL-STD-1553 |
Aeroflex Circuit Technology |
| 7 |
GFB7417-DP |
Hex power gates, with open collectors outputs (15V) |
SESCOSEM |
| 8 |
GFC5417-DC |
Hex power gates, with open collectors outputs (15V) |
SESCOSEM |
| 9 |
GFC5417-DP |
Hex power gates, with open collectors outputs (15V) |
SESCOSEM |
| 10 |
GFC5417-FM |
Hex power gates, with open collectors outputs (15V) |
SESCOSEM |
| 11 |
MRA1417-11 |
MICroAMP 11W, Broadband 1400-1700MHz, gold metalized |
TRW |
| 12 |
MRA1417-2 |
MICroAMP 2W, Broadband 1400-1700MHz, gold metalized |
TRW |
| 13 |
MRA1417-25 |
MICroAMP 25W, Broadband 1400-1700MHz, gold metalized |
TRW |
| 14 |
MRA1417-6 |
MICroAMP 6W, Broadband 1400-1700MHz, gold metalized |
TRW |
| 15 |
MRA1417-6H |
NPN SILICON RF POWER TRANSISTOR |
Advanced Semiconductor |
| 16 |
MRAL1417-11 |
MICroAMP 1400-1700MHz, full MRA performance at 22 volts Vcc, gold metalization, common base, 11W |
TRW |
| 17 |
MRAL1417-2 |
MICroAMP 1400-1700MHz, full MRA performance at 22 volts Vcc, gold metalization, common base, 2W |
TRW |
| 18 |
MRAL1417-25 |
MICroAMP 1400-1700MHz, full MRA performance at 22 volts Vcc, gold metalization, common base, 25W |
TRW |
| 19 |
MRAL1417-6 |
MICroAMP 1400-1700MHz, full MRA performance at 22 volts Vcc, gold metalization, common base, 6W |
TRW |
| 20 |
MSP430F417-DIE |
DIE 16-Bit Ultra-Low-Power Microcontroller, 32kB Flash, 1kB RAM, Comparator, 96 Segment LCD |
Texas Instruments |
| 21 |
NCP1417-D |
200 mA DC-DC Step-up Converter with Dual Low Battery Protection |
ON Semiconductor |
| 22 |
NES1417-10B |
1.4-1.7 GHz, 10 W, L,S-band power GaAs MESFET |
NEC |
| 23 |
NES1417-20B |
1.4-1.7 GHz, 20 W, L,S-band power GaAs MESFET |
NEC |
| 24 |
NX8560SJ417-BC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1541.746 nm. Frequency 194.45 THz. FC-UPC connector. |
NEC |
| 25 |
NX8560SJ417-CC |
EA modulator and wavelength monitor integrated 1550 nm MQW-DFB laser diode module for 10 Gb/s applications. ITU-T wavelength 1541.746 nm. Frequency 194.45 THz. SC-UPC connector. |
NEC |
| 26 |
NX8567SA417-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1541.746nm. Frequency 194.45 THz. FC-UPC connector. |
NEC |
| 27 |
NX8567SA417-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 600 km DWDM applications. ITU-T wavelength 1541.746 nm. Frequency 194.45 THz. SC-UPC connector. |
NEC |
| 28 |
NX8567SAM417-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1541.746 nm. Frequency 194.45 THz. FC-UPC connector. |
NEC |
| 29 |
NX8567SAM417-CC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 360 km DWDM applications. ITU-T wavelength 1541.746 nm. Frequency 194.45 THz. SC-UPC connector. |
NEC |
| 30 |
NX8567SAS417-BC |
EA modulator and wavelength monitor integrated InGaAsP MQW DFB laser diode module for 2.5 Gb/s ultralong-reach 240 km DWDM applications. ITU-T wavelength 1541.746 nm. Frequency 194.45 THz. FC-UPC connector. |
NEC |
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