| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4260 |
Zener Diode 8.2V 10W |
Motorola |
| 2 |
1N4260A |
Zener Diode 8.2V 10W |
Motorola |
| 3 |
1N4260B |
Zener Diode 8.2V 10W |
Motorola |
| 4 |
2N4260 |
PNP silicon annular transistor |
Motorola |
| 5 |
2N4260 |
Silicon PNP Transistor |
Motorola |
| 6 |
2N4260 |
Chip Type 2C4261 Geometry 0014 Polarity PNP |
Semicoa Semiconductor |
| 7 |
2N4260UB |
Chip Type 2C4261 Geometry 0014 Polarity PNP |
Semicoa Semiconductor |
| 8 |
2SC4260 |
Silicon NPN Transistor |
Hitachi Semiconductor |
| 9 |
2SC4260 |
Silicon NPN Epitaxial |
Hitachi Semiconductor |
| 10 |
2SC4260 |
Transistors>Amplifiers/Bipolar |
Renesas |
| 11 |
74260 |
DUAL 5-INPUT NOR GATE |
Motorola |
| 12 |
74260 |
Dual 5-Input NOR Gate |
National Semiconductor |
| 13 |
74260 |
LOW POWER SCHOTTKY |
ON Semiconductor |
| 14 |
BQ24260 |
3A, 30V, Host-Controlled Single-Input, Single Cell Switchmode Li-Ion Battery Charger with USB OTG 36-DSBGA -40 to 85 |
Texas Instruments |
| 15 |
BQ24260RGER |
3A, 30V, Host-Controlled Single-Input, Single Cell Switchmode Li-Ion Battery Charger with USB OTG 24-VQFN -40 to 85 |
Texas Instruments |
| 16 |
BQ24260RGET |
3A, 30V, Host-Controlled Single-Input, Single Cell Switchmode Li-Ion Battery Charger with USB OTG 24-VQFN -40 to 85 |
Texas Instruments |
| 17 |
BQ24260YFFR |
3A, 30V, Host-Controlled Single-Input, Single Cell Switchmode Li-Ion Battery Charger with USB OTG 36-DSBGA -40 to 85 |
Texas Instruments |
| 18 |
BQ24260YFFT |
3A, 30V, Host-Controlled Single-Input, Single Cell Switchmode Li-Ion Battery Charger with USB OTG 36-DSBGA -40 to 85 |
Texas Instruments |
| 19 |
CD4260A |
POW-R-BLOK Dual SCR/Diode Isolated Module 60 Amperes / Up to 1600 Volts |
Powerex Power Semiconductors |
| 20 |
DB2G42600L |
Schottky Barrier Diodes |
Panasonic |
| 21 |
G-4260 |
Microwave Garnets Holmium Doped |
Skyworks Solutions |
| 22 |
HM514260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 23 |
HM514260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 24 |
HM514260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 25 |
HM514260ALJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 26 |
HM514260ALJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 27 |
HM514260ALJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 28 |
HM514260ALRR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 29 |
HM514260ALRR-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 30 |
HM514260ALRR-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
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