No. |
Part Name |
Description |
Manufacturer |
1 |
1.5KE130C |
Transient voltage suppressor. 1500 W. Breakdown voltage 117.0 V(min), 143 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
2 |
15KP150A |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/192.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 243 V @ Ipp = 62 A. |
Panjit International Inc |
3 |
15KP150CA |
Glass passivated junction transient voltage suppressor. Vrwm = 150 V. Vbr(min/max) = 167/192.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 243 V @ Ipp = 62 A. |
Panjit International Inc |
4 |
1N4755A |
43 V, 1 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
5 |
1N5260A |
43 V, 3.0 mA, zener diode |
Leshan Radio Company |
6 |
1N5260AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 43 V. Tolerance +-10%. |
Microsemi |
7 |
1N5260BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 43 V. Tolerance +-5%. |
Microsemi |
8 |
1N5260C |
43 V, 3.0 mA, zener diode |
Leshan Radio Company |
9 |
1N5260D |
43 V, 3.0 mA, zener diode |
Leshan Radio Company |
10 |
1N5260UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 43 V. |
Microsemi |
11 |
1N5367B |
43 V, 30 mA, 5 W glass passivated zener diode |
Fagor |
12 |
1N5367B |
43 V, 5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
13 |
1N5940B |
43 V, 1.5 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
14 |
1N6286 |
43 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
15 |
1N6286A |
43 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
16 |
1N6286C |
43 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
17 |
1N6286CA |
43 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
18 |
1N976A |
43 V, 3.0 mA, silicon planar zener diode |
Honey Technology |
19 |
1N976A |
43 V, zener diode |
Leshan Radio Company |
20 |
1N976B |
43 V, 3.0 mA, silicon planar zener diode |
Honey Technology |
21 |
1SMA4755 |
43 V, 1 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
22 |
1SMB5940 |
43 V, 1.5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
23 |
1SMB5940A |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 43 V. +-10% tolerance. |
Motorola |
24 |
1SMB5940B |
1.5 watt plastic surfase mount silicon zener diode. Nom zener voltage 43 V. +-5% tolerance. |
Motorola |
25 |
1SMC5367 |
43 V, 5 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
26 |
CLL4678 |
LOW LEVEL ZENER DIODE 1.8 VOLTS THRU 43 VOLTS 500mW, 5% TOLERANCE |
Central Semiconductor |
27 |
CLL4679 |
LOW LEVEL ZENER DIODE 1.8 VOLTS THRU 43 VOLTS 500mW, 5% TOLERANCE |
Central Semiconductor |
28 |
CLL4680 |
LOW LEVEL ZENER DIODE 1.8 VOLTS THRU 43 VOLTS 500mW, 5% TOLERANCE |
Central Semiconductor |
29 |
CLL4681 |
LOW LEVEL ZENER DIODE 1.8 VOLTS THRU 43 VOLTS 500mW, 5% TOLERANCE |
Central Semiconductor |
30 |
CLL4682 |
LOW LEVEL ZENER DIODE 1.8 VOLTS THRU 43 VOLTS 500mW, 5% TOLERANCE |
Central Semiconductor |
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