| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE150CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 143.0 V(min), 158.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 2 |
1.5KE300 |
243.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
| 3 |
1.5KE300C |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 243.00 V. Test current IT = 1 mA. |
Bytes |
| 4 |
1N4755 |
43.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 5 |
1N4755A |
43.0V Professional Grade 1 W Zener Diode |
Continental Device India Limited |
| 6 |
1N5260B |
43.0V 500 mW Zener Diode |
Continental Device India Limited |
| 7 |
1N5751B |
43.0V Voltage Reference Diode |
Philips |
| 8 |
1N976 |
43.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 9 |
1N976A |
43.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 10 |
1N976B |
43.0V Standard Grade 400 mW Axial Zener Diode |
Continental Device India Limited |
| 11 |
APL501J |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500V 43.0A 0.12Ohm |
Advanced Power Technology |
| 12 |
APL501P |
POWER MOS IV N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500V 43.0A 0.12 OHM |
Advanced Power Technology |
| 13 |
APT5010JN |
POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm |
Advanced Power Technology |
| 14 |
APT5012JN |
POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm |
Advanced Power Technology |
| 15 |
CLL5260A |
43.0V Reference Grade 500 mW Mini MELF Zener Diode |
Continental Device India Limited |
| 16 |
CLL5260B |
43.0V Reference Grade 500 mW Mini MELF Zener Diode |
Continental Device India Limited |
| 17 |
CLL976A |
43.0V General Purpose 500 mW Mini MELF Zener Diode |
Continental Device India Limited |
| 18 |
CMBZ5260B |
43.0V 300mW SMD Dual Zener Diode |
Continental Device India Limited |
| 19 |
DSC1001CI2-043.0000 |
Clock and Timing - Oscillators |
Microchip |
| 20 |
DSC1001CI2-043.0000T |
Clock and Timing - Oscillators |
Microchip |
| 21 |
MM3Z43VB |
43.0V 200mW 2% Zener, SOD323F |
Fairchild Semiconductor |
| 22 |
MM3Z43VC |
43.0V 200mW 5% Zener, SOD323F |
Fairchild Semiconductor |
| 23 |
NTE5272AK |
50 watt zener diode, +-5% tolerance. Nominal zener voltage Vz = 43.0V. Zener test current Izt = 290mA. |
NTE Electronics |
| 24 |
P4KE300 |
243.00V; 1mA ;400W peak pulse power; glass passivated junction transient voltage suppressor (TVS) diode. For bipolar applications |
MDE Semiconductor |
| 25 |
P4KE300-T3 |
Reverse stand-off voltage: 243.00V transient voltage suppressor |
Won-Top Electronics |
| 26 |
P4KE300-TB |
Reverse stand-off voltage: 243.00V transient voltage suppressor |
Won-Top Electronics |
| 27 |
P4KE300C |
400 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 243.00 V. Test current IT = 1 mA. |
Bytes |
| 28 |
P4KE300C |
243.00V; 400W transient voltage suppressor |
Diodes |
| 29 |
P4KE300C-T3 |
Reverse stand-off voltage: 243.00V transient voltage suppressor |
Won-Top Electronics |
| 30 |
P4KE300C-TB |
Reverse stand-off voltage: 243.00V transient voltage suppressor |
Won-Top Electronics |
| | | |
