| No. |
Part Name |
Description |
Manufacturer |
| 1 |
5430DMQB |
7 V, 8-input NAND gate |
National Semiconductor |
| 2 |
A430D |
400V, 1000A general purpose single diode |
Powerex Power Semiconductors |
| 3 |
C430D |
400V, 680A phase control single thyristor |
Powerex Power Semiconductors |
| 4 |
C430DX500 |
Phase Control SCR 800 Amperes Avg 100-600 Volts |
Powerex Power Semiconductors |
| 5 |
C430DX550 |
Phase Control SCR 800 Amperes Avg 100-400 Volts |
Powerex Power Semiconductors |
| 6 |
ERG1FGS430D |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 7 |
ERG1FJS430D |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 8 |
ERG2FJS430D |
Leaded Resistors - Metal (Oxide) Film Resistors |
Panasonic |
| 9 |
FRL430D |
2A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 10 |
FRM430D |
3A/ 500V/ 2.50 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 11 |
FRS430D |
3A/ 500V/ 2.52 Ohm/ Rad Hard/ N-Channel Power MOSFETs |
Intersil |
| 12 |
FSL430D |
2A/ 500V/ 2.50 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 13 |
FSL430D1 |
2A/ 500V/ 2.50 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 14 |
FSL430D3 |
2A/ 500V/ 2.50 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 15 |
FSS430D |
3A, 500V, 2.70 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs |
Intersil |
| 16 |
FSS430D1 |
3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 17 |
FSS430D3 |
3A/ 500V/ 2.70 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |
Intersil |
| 18 |
FSYE430D |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
Intersil |
| 19 |
FSYE430D1 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
Intersil |
| 20 |
FSYE430D3 |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs |
Intersil |
| 21 |
KDV1430D |
Silicon diode for FM radio band tuning applications |
Korea Electronics (KEC) |
| 22 |
LC79430D |
Dot Matrix LCD Driver |
SANYO |
| 23 |
MAX6430DHUS |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
MAXIM - Dallas Semiconductor |
| 24 |
MAX6430DHUS+ |
Low-Power, Single/Dual-Level Battery Monitors with Hysteresis |
MAXIM - Dallas Semiconductor |
| 25 |
MAX6430DHUS-T |
3.4 V, Low-power, single/dual-level battery monitor with hysteresis |
MAXIM - Dallas Semiconductor |
| 26 |
MSG430D4 |
Transistor SiGe HBT type - For low-noise RF amplifier |
Panasonic |
| 27 |
NV430D05 |
Surge Suppressor Metal Oxide Varistor |
NEC |
| 28 |
NV430D07 |
Surge Suppressor Metal Oxide Varistor |
NEC |
| 29 |
NV430D10 |
Surge Suppressor Metal Oxide Varistor |
NEC |
| 30 |
NV430D14 |
Surge Suppressor Metal Oxide Varistor |
NEC |
| | | |
