No. |
Part Name |
Description |
Manufacturer |
1 |
2002A |
Marking for NE73432 part number, 32 NEC (TO-92) package |
NEC |
2 |
C3544 |
Marking for NE94432 part number, 32 NEC (TO-92) package |
NEC |
3 |
DS1089LU-4GL |
18.432 MHz, 3.3 V, center spread-spectrum econoscillator |
MAXIM - Dallas Semiconductor |
4 |
EDE1104AASE |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
5 |
EDE1104AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
6 |
EDE1104AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
7 |
EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
8 |
EDE1108AASE |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
9 |
EDE1108AASE-4A-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
10 |
EDE1108AASE-5C-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
11 |
EDE1108AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. |
Elpida Memory |
12 |
HMS91C7432 |
HMS91C7432 features and functions |
Hynix Semiconductor |
13 |
MAX5432EVKIT |
Evaluation Kit for the MAX5432 and MAX5433 |
MAXIM - Dallas Semiconductor |
14 |
MAX5432EVKIT+ |
Evaluation Kit for the MAX5432 and MAX5433 |
MAXIM - Dallas Semiconductor |
15 |
MAX7376CMQK-T |
1.8432 MHz, 2.7 V to 5.5 V, silicon oscillator with reset output |
MAXIM - Dallas Semiconductor |
16 |
MAX7376CRQK-T |
1.8432 MHz, 2.7 V to 5.5 V, silicon oscillator with reset output |
MAXIM - Dallas Semiconductor |
17 |
MAX7377AXOK-T |
1.8432 MHz, 2.7 V to 5.5 V, silicon oscillator with low-power frequency switching |
MAXIM - Dallas Semiconductor |
18 |
MCM69C432 |
MCM69C432 16K x 64 CAM |
Motorola |
19 |
MH32S64APFB-7 |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
20 |
MH32S64APFB-8 |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
21 |
MH32S64APHB-6 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
22 |
MH32S64APHB-7 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
23 |
MH32S64APHB-8 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
24 |
MH32S64PFJ-6 |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
25 |
MH32S64PFJ-6L |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
26 |
MH32S64PFJ-7 |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
27 |
MH32S64PFJ-7L |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
28 |
MH32S72APHB-6 |
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
29 |
MH32S72APHB-7 |
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
30 |
MH32S72APHB-8 |
2,415,919,104-BIT (33,554,432 - WORD BY 72-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| | | |